KTC3600S . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: KTC3600S
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 0.15 W
   Tensión colector-base (Vcb): 20 V
   Tensión colector-emisor (Vce): 10 V
   Tensión emisor-base (Veb): 1.5 V
   Corriente del colector DC máxima (Ic): 0.04 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 7000 MHz
   Capacitancia de salida (Cc): 0.7 pF
   Ganancia de corriente contínua (hfe): 50
   Paquete / Cubierta: SOT23

Búsqueda de reemplazo de transistor bipolar KTC3600S

KTC3600S Datasheet (PDF)

..1. Size:500K kec
ktc3600s.pdf

SEMICONDUCTOR KTC3600STECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORVHF/UHF WIDE BAND AMPLIFIER APPLICATION.FEATURESELow Noise Figure, High Gain.L B LNF=1.1dB, |S21e|2=13dB (f=1GHz). DIM MILLIMETERS_+A 2.93 0.20B 1.30+0.20/-0.15C 1.30 MAX23 D 0.40+0.15/-0.05E 2.40+0.30/-0.201G 1.90MAXIMUM RATING (Ta=25 )H 0.95J 0.13+0.10/-0.05CHARACTERISTIC SYMBOL RATIN

7.1. Size:83K kec
ktc3600u.pdf

SEMICONDUCTOR KTC3600UTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORVHF/UHF WIDE BAND AMPLIFIER APPLICATION.EFEATURESM B MDIM MILLIMETERSLow Noise Figure, High Gain._A 2.00 0.20+D2NF=1.1dB, |S21e|2=13dB (f=1GHz). _+B 1.25 0.15_C 0.90 + 0.1031D 0.3+0.10/-0.05_+E 2.10 0.20G 0.65H 0.15+0.1/-0.06J 1.30MAXIMUM RATING (Ta=25 )K 0.00-0.10L 0.70

8.1. Size:80K kec
ktc3605u.pdf

SEMICONDUCTOR KTC3605UTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORVHF/UHF WIDE BAND AMPLIFIER APPLICATION.FEATURESBLow Noise Figure, High Gain. B1NF=1.1dB, |S21e|2=13dB (f=1GHz).DIM MILLIMETERS1 6_A 2.00 0.20+Two internal isolated Transistors in one package._2 5 A1 1.3 + 0.1_B 2.1 + 0.13 4 D _B1 1.25 + 0.1C 0.65D 0.2+0.10/-0.05MAXIMUM RATING (Ta=25 )

8.2. Size:502K kec
ktc3605t.pdf

SEMICONDUCTOR KTC3605TTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORVHF/UHF WIDE BAND AMPLIFIER APPLICATION.EFEATURES K B KDIM MILLIMETERSLow Noise Figure, High Gain._A 2.9 + 0.216B 1.6+0.2/-0.1NF=1.1dB, |S21e|2=13dB (f=1GHz)._C 0.70 + 0.052 5Two internal isolated Transistors in one package. _+D 0.4 0.1E 2.8+0.2/-0.3_F 1.9 + 0.23 4G 0.95_H 0.16 +

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: PT23T5551

Liste

Recientemente añadidas las descripciónes de los transistores:

BJT: GN1A3Q | D965-KEHE | 2SD662B | 2SD661A | 2SC3080 | S9018L | S9012J | 2SA73L | 2SA73H | 2SA1015H | WT955 | TS13005CK | TP5001P3 | SS8550W-L | SS8550W-J | SS8550W-H | SS8550E | SS8550D | SS8550C | SS8050E | SS8050D