KTC3730V
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: KTC3730V
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.1
W
Tensión colector-base (Vcb): 20
V
Tensión colector-emisor (Vce): 11
V
Tensión emisor-base (Veb): 3
V
Corriente del colector DC máxima (Ic): 0.05
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 3200
MHz
Capacitancia de salida (Cc): 0.8
pF
Ganancia de corriente contínua (hfe): 56
Paquete / Cubierta: VSM
Búsqueda de reemplazo de transistor bipolar KTC3730V
KTC3730V
Datasheet (PDF)
..1. Size:75K kec
ktc3730v.pdf 
SEMICONDUCTOR KTC3730VTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORVHF/UHF WIDE BAND AMPLIFIER APPLICATION.EFEATURESBLow Noise Figure, High Gain.Small rbbCc (Typ. 4pS).DIM MILLIMETERS2_A 1.2 +0.05_B 0.8 +0.0513_C 0.5 + 0.05_+D 0.3 0.05_E 1.2 + 0.05MAXIMUM RATING (Ta=25 ) _G 0.8 + 0.05H 0.40P PCHARACTERISTIC SYMBOL RATING UNIT _J 0.12 +
7.1. Size:701K kec
ktc3730f.pdf
SEMICONDUCTOR KTC3730FTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORVHF/UHF WIDE BAND AMPLIFIER APPLICATION.FEATURESELow Noise Figure, High Gain.BSmall rbb Cc (Typ. 4pS).DIM MILLIMETERS2_A 0.6 + 0.053 _+B 0.8 0.05C 0.38+0.02/-0.041MAXIMUM RATING (Ta=25)_+D 0.2 0.05_+E 1.0 0.05CHARACTERISTIC SYMBOL RATING UNIT_+G 0.35 0.05_+J 0.1
7.2. Size:36K kec
ktc3730u.pdf
SEMICONDUCTOR KTC3730UTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORVHF/UHF WIDE BAND AMPLIFIER APPLICATION.EFEATURESM B MDIM MILLIMETERSLow Noise Figure, High Gain._A 2.00 0.20+DSmall rbbCc (Typ. 4pS). 2 _+B 1.25 0.15_C 0.90 0.10+1 3D 0.3+0.10/-0.05_+E 2.10 0.20G 0.65H 0.15+0.1/-0.06J 1.30MAXIMUM RATING (Ta=25)K 0.00-0.10L 0.70
9.1. Size:38K kec
ktc3708u.pdf
SEMICONDUCTOR KTC3708UTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHigh frequency amplifier transistor, RF switching application.EFEATURESM B MDIM MILLIMETERSVery low on resistance (RON)._A 2.00 0.20+D2Low capacitance. _+B 1.25 0.15_C 0.90 + 0.1031D 0.3+0.10/-0.05_+E 2.10 0.20G 0.65H 0.15+0.1/-0.06J 1.30MAXIMUM RATING (Ta=25 )K 0.00-0.10
9.2. Size:84K kec
ktc3770t.pdf
SEMICONDUCTOR KTC3770TTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORVHF/UHF WIDE BAND AMPLIFIER APPLICATION.EBFEATURES KDIM MILLIMETERSLow Noise Figure, High Gain._A 2.9 + 0.2B 1.6+0.2/-0.1NF=1.1dB, |S21e|2=11dB (f=1GHz)._C 0.70 + 0.0523_D 0.4 + 0.1E 2.8+0.2/-0.3_F 1.9 + 0.21G 0.95_H 0.16 + 0.05MAXIMUM RATING (Ta=25 )I 0.00-0.10J 0.25+0.25/-
9.3. Size:83K kec
ktc3770u.pdf
SEMICONDUCTOR KTC3770UTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORVHF/UHF WIDE BAND AMPLIFIER APPLICATION.EFEATURESM B MDIM MILLIMETERSLow Noise Figure, High Gain._A 2.00 0.20+D2NF=1.1dB, |S21e|2=11dB (f=1GHz). _+B 1.25 0.15_C 0.90 + 0.1031D 0.3+0.10/-0.05_+E 2.10 0.20G 0.65H 0.15+0.1/-0.06J 1.30MAXIMUM RATING (Ta=25 )K 0.00-0.10L 0.70
9.4. Size:81K kec
ktc3770v.pdf
SEMICONDUCTOR KTC3770VTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORVHF/UHF WIDE BAND AMPLIFIER APPLICATION.EFEATURESBLow Noise Figure, High Gain.NF=1.1dB, |S21e|2=11dB (f=1GHz).DIM MILLIMETERS2_A 1.2 + 0.05_B 0.8 + 0.0513_C 0.5 + 0.05_D 0.3 + 0.05_E 1.2 + 0.05MAXIMUM RATING (Ta=25 ) _G 0.8 + 0.05H 0.40P P_J 0.12 + 0.05CHARACTERISTIC SYMBO
9.5. Size:75K kec
ktc3790u.pdf
SEMICONDUCTOR KTC3790UTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORVHF/UHF WIDE BAND AMPLIFIER APPLICATION.EFEATURESM B MDIM MILLIMETERSLow Noise Figure, High Gain._A 2.00 0.20+D2NF=1.2dB, |S21e|2=13dB (f=1GHz). _+B 1.25 0.15_C 0.90 + 0.1031D 0.3+0.10/-0.05_+E 2.10 0.20G 0.65H 0.15+0.1/-0.06J 1.30MAXIMUM RATING (Ta=25 )K 0.00-0.10L 0.70
9.6. Size:501K kec
ktc3770ul.pdf
SEMICONDUCTOR KTC3770ULTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORVHF/UHF WIDE BAND AMPLIFIER APPLICATION.FEATURES C1 4Low Noise Figure, High Gain.NF=1.1dB, |S21e|2=11dB (f=1GHz).ADIM MILLIMETERS_A 1.0 0.05+_B +0.6 0.052 +0.02 3C 0.36- 0.03B_D 0.25 + 0.03_E 0.15 + 0.03MAXIMUM RATING (Ta=25 ) _F 0.65 + 0.03H2 3 _G 0.35 + 0.03CHARACTERI
9.7. Size:30K kec
ktc3780u.pdf
SEMICONDUCTOR KTC3780UTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORVHF/UHF WIDE BAND AMPLIFIER APPLICATION.EFEATURESM B MDIM MILLIMETERSLow Noise Figure, High Gain._A 2.00 0.20+DNF=1.4dB, |S21e|2=12dB (f=1GHz). 2 _+B 1.25 0.15_C 0.90 + 0.101 3D 0.3+0.10/-0.05_+E 2.10 0.20G 0.65H 0.15+0.1/-0.06J 1.30MAXIMUM RATING (Ta=25)K 0.00-0.10L
9.8. Size:91K kec
ktc3770f.pdf
SEMICONDUCTOR KTC3770FTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORVHF/UHF WIDE BAND AMPLIFIER APPLICATION.FEATURESELow Noise Figure, High Gain.BNF=1.1dB, |S21e|2=11dB (f=1GHz).DIM MILLIMETERS2_A 0.6 + 0.053 _+B 0.8 0.05C 0.38+0.02/-0.041MAXIMUM RATING (Ta=25)_+D 0.2 0.05_+E 1.0 0.05CHARACTERISTIC SYMBOL RATING UNIT_+G 0.35 0.05_
9.9. Size:438K kec
ktc3770s.pdf
SEMICONDUCTOR KTC3770STECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORVHF/UHF WIDE BAND AMPLIFIER APPLICATION.EL B LFEATURESDIM MILLIMETERSLow Noise Figure, High Gain._+A 2.93 0.20B 1.30+0.20/-0.15NF=1.1dB, |S21e|2=11dB (f=1GHz).C 1.30 MAX23 D 0.45+0.15/-0.05E 2.40+0.30/-0.201G 1.90H 0.95J 0.13+0.10/-0.05K 0.00 ~ 0.10MAXIMUM RATING (Ta=25 )L 0.55P P
9.10. Size:490K kec
ktc3790s.pdf
SEMICONDUCTOR KTC3790STECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORVHF/UHF WIDE BAND AMPLIFIER APPLICATION.FEATURESELow Noise Figure, High Gain.L B LNF=1.2dB, |S21e|2=13dB (f=1GHz). DIM MILLIMETERS_+A 2.93 0.20B 1.30+0.20/-0.15C 1.30 MAX23 D 0.40+0.15/-0.05E 2.40+0.30/-0.201G 1.90MAXIMUM RATING (Ta=25 )H 0.95J 0.13+0.10/-0.05CHARACTERISTIC SYMBOL RATIN
Otros transistores... 2N3200
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