KTC3770T . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: KTC3770T
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.9 W
Tensión colector-base (Vcb): 20 V
Tensión colector-emisor (Vce): 12 V
Tensión emisor-base (Veb): 3 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 7000 MHz
Capacitancia de salida (Cc): 1 pF
Ganancia de corriente contínua (hfe): 50
Paquete / Cubierta: TSM
Búsqueda de reemplazo de transistor bipolar KTC3770T
KTC3770T Datasheet (PDF)
ktc3770t.pdf
SEMICONDUCTOR KTC3770TTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORVHF/UHF WIDE BAND AMPLIFIER APPLICATION.EBFEATURES KDIM MILLIMETERSLow Noise Figure, High Gain._A 2.9 + 0.2B 1.6+0.2/-0.1NF=1.1dB, |S21e|2=11dB (f=1GHz)._C 0.70 + 0.0523_D 0.4 + 0.1E 2.8+0.2/-0.3_F 1.9 + 0.21G 0.95_H 0.16 + 0.05MAXIMUM RATING (Ta=25 )I 0.00-0.10J 0.25+0.25/-
ktc3770u.pdf
SEMICONDUCTOR KTC3770UTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORVHF/UHF WIDE BAND AMPLIFIER APPLICATION.EFEATURESM B MDIM MILLIMETERSLow Noise Figure, High Gain._A 2.00 0.20+D2NF=1.1dB, |S21e|2=11dB (f=1GHz). _+B 1.25 0.15_C 0.90 + 0.1031D 0.3+0.10/-0.05_+E 2.10 0.20G 0.65H 0.15+0.1/-0.06J 1.30MAXIMUM RATING (Ta=25 )K 0.00-0.10L 0.70
ktc3770v.pdf
SEMICONDUCTOR KTC3770VTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORVHF/UHF WIDE BAND AMPLIFIER APPLICATION.EFEATURESBLow Noise Figure, High Gain.NF=1.1dB, |S21e|2=11dB (f=1GHz).DIM MILLIMETERS2_A 1.2 + 0.05_B 0.8 + 0.0513_C 0.5 + 0.05_D 0.3 + 0.05_E 1.2 + 0.05MAXIMUM RATING (Ta=25 ) _G 0.8 + 0.05H 0.40P P_J 0.12 + 0.05CHARACTERISTIC SYMBO
ktc3770ul.pdf
SEMICONDUCTOR KTC3770ULTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORVHF/UHF WIDE BAND AMPLIFIER APPLICATION.FEATURES C1 4Low Noise Figure, High Gain.NF=1.1dB, |S21e|2=11dB (f=1GHz).ADIM MILLIMETERS_A 1.0 0.05+_B +0.6 0.052 +0.02 3C 0.36- 0.03B_D 0.25 + 0.03_E 0.15 + 0.03MAXIMUM RATING (Ta=25 ) _F 0.65 + 0.03H2 3 _G 0.35 + 0.03CHARACTERI
ktc3770f.pdf
SEMICONDUCTOR KTC3770FTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORVHF/UHF WIDE BAND AMPLIFIER APPLICATION.FEATURESELow Noise Figure, High Gain.BNF=1.1dB, |S21e|2=11dB (f=1GHz).DIM MILLIMETERS2_A 0.6 + 0.053 _+B 0.8 0.05C 0.38+0.02/-0.041MAXIMUM RATING (Ta=25)_+D 0.2 0.05_+E 1.0 0.05CHARACTERISTIC SYMBOL RATING UNIT_+G 0.35 0.05_
ktc3770s.pdf
SEMICONDUCTOR KTC3770STECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORVHF/UHF WIDE BAND AMPLIFIER APPLICATION.EL B LFEATURESDIM MILLIMETERSLow Noise Figure, High Gain._+A 2.93 0.20B 1.30+0.20/-0.15NF=1.1dB, |S21e|2=11dB (f=1GHz).C 1.30 MAX23 D 0.45+0.15/-0.05E 2.40+0.30/-0.201G 1.90H 0.95J 0.13+0.10/-0.05K 0.00 ~ 0.10MAXIMUM RATING (Ta=25 )L 0.55P P
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: KTC3790S
History: KTC3790S
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: GN1A3Q | D965-KEHE | 2SD662B | 2SD661A | 2SC3080 | S9018L | S9012J | 2SA73L | 2SA73H | 2SA1015H | WT955 | TS13005CK | TP5001P3 | SS8550W-L | SS8550W-J | SS8550W-H | SS8550E | SS8550D | SS8550C | SS8050E | SS8050D