KTC4072E . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

SEMICONDUCTOR KTC4072ETECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORSWITCHING APPLICATION. FEATURESHigh Current.Low VCE(sat).: VCE(sat)250mV at IC=200mA/IB=10mA.Complementary to KTA2012E.MAXIMUM RATING (Ta=25)CHARACTERISTIC SYMBOL RATING UNITVCBOCollector-Base Voltage 15 VVCEOCollector-Emitter Voltage 12 VVEBOEmitter-Base Voltage 6 VIC500 mACollec

SEMICONDUCTOR KTC4072VTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORSWITCHING APPLICATION. FEATURESEHigh Current.BLow VCE(sat).: VCE(sat) 250mV at IC=200mA/IB=10mA.DIM MILLIMETERS2_Complementary to KTA2012V. A 1.2 +0.05_B 0.8 +0.0513_C 0.5 + 0.05_D 0.3 + 0.05_E 1.2 + 0.05_G 0.8 0.05+H 0.40P PMAXIMUM RATING (Ta=25 )_J 0.12 + 0.05_K

KTC4075-OMCCKTC4075-YMicro Commercial ComponentsTM20736 Marilla Street ChatsworthKTC4075-GRMicro Commercial ComponentsCA 91311Phone: (818) 701-4933KTC4075-BLFax: (818) 701-4939FeaturesNPN Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information)Plastic-Encapsulate Complementary to KTA2014 Epoxy meets UL 94 V-0

SEMICONDUCTOR KTC4075VTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. EFEATURESBExcellent hFE Linearity: hFE(0.1mA)/hFE(2mA)=0.95(Typ.).DIM MILLIMETERS2_High hFE : hFE=70~700. A 1.2 +0.05_B 0.8 +0.05Low Noise : NF=1dB(Typ.), 10dB(Max.). 13_C 0.5 + 0.05_D 0.3 + 0.05Complementary to KTA2014V._E

SEMICONDUCTOR KTC4075TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.EFEAUTRESM B MDIM MILLIMETERSExcellent hFE Linearity _+A 2.00 0.20D: hFE(0.1mA)/hFE(2mA)=0.95(Typ.).2_+B 1.25 0.15_High hFE : hFE=70700.+C 0.90 0.1031D 0.3+0.10/-0.05Low Noise : NF=1dB(Typ.), 10dB(Max.)._+E 2.10 0.2

SEMICONDUCTOR KTC4079TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH FREQUENCY APPLICATION. HF, VHF BAND AMPLIFIER APPLICATION.EFEATUREM B MDIM MILLIMETERSHigh Power Gain : Gpe=29dB(Typ.) (f=10.7MHz)_A+2.00 0.20D2_+B 1.25 0.15_+C 0.90 0.1031D 0.3+0.10/-0.05_E +2.10 0.20G 0.65MAXIMUM RATING (Ta=25)H 0.15+0.1/-0.06J 1.30CHARACT

SEMICONDUCTOR KTC4076TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.EFEATURESM B MDIM MILLIMETERSExcellent hFE Linearity_A+2.00 0.20D2: hFE(2)=25(Min.) at VCE=6V, IC=400mA. _+B 1.25 0.15_+C 0.90 0.10Complementary to KTA2015.31D 0.3+0.10/-0.05_E +2.10 0.20G 0.65H 0.15+0.1/-0.06J 1.30

SEMICONDUCTOR KTC4074VTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. EFEATURESBExcellent hFE Linearity: hFE(0.1mA)/hFE(2mA)=0.95(Typ.).DIM MILLIMETERS2_High hFE : hFE=120~400. A 1.2 +0.05_B 0.8 +0.05Low Collector-to-Emitter Saturation Voltage. 13_C 0.5 + 0.05_D 0.3 + 0.05Complementary to KTA2013V._E

SEMICONDUCTOR KTC4074FTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURESEExcellent hFE LinearityB: hFE(0.1mA)/hFE(2mA)=0.95(Typ.).High hFE : hFE=120~400.Complementary to KTA2013F. DIM MILLIMETERS2_A 0.6 + 0.05Thin Fine Pitch Small Package.3 _+B 0.8 0.05C 0.38+0.02/-0.041_+D 0.2 0.05_+

SEMICONDUCTOR KTC4077TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORLOW NOISE AMPLIFIER APPLICATION. FEATURES EHigh Voltage : VCEO=120V.M B MDIM MILLIMETERSExcellent hFE Linearity_A+2.00 0.20D2: hFE(0.1mA)/hFE(2mA)=0.95(Typ.). _+B 1.25 0.15_+C 0.90 0.10High hFE: hFE=200700.31D 0.3+0.10/-0.05_E +2.10 0.20Low Noise : NF=1dB(Typ.),

SEMICONDUCTOR KTC4075ETECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. EFEATURESBDIM MILLIMETERSExcellent hFE Linearity_+A 1.60 0.10D: hFE(0.1mA)/hFE(2mA)=0.95(Typ.). _+2 B 0.85 0.10_+C 0.70 0.10Low Noise : NF=1dB(Typ.), 10dB(Max.).31D 0.27+0.10/-0.05_Complementary to KTA2014E. E 1.60 0.10+

SEMICONDUCTOR KTC4075FTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURESEExcellent hFE LinearityB: hFE(0.1mA)/hFE(2mA)=0.95(Typ.).High hFE : hFE=70~700.Low Noise : NF=1dB(Typ.), 10dB(Max.). DIM MILLIMETERS2_A 0.6 + 0.05Complementary to KTA2014F.3 _+B 0.8 0.05C 0.38+0.02/-0.041Thin Fine Pitc

KTC4075TRANSISTOR (NPN) SOT-23 FEATURES 1. BASE 2. EMITTER 3. COLLECTOR Excellent hFE linearity High hFE Low Noise Complementary to KTA2014 MAXIMUM RATINGS(TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO 60 VCollector-Base Voltage VCEO 50 VCollector-Emitter Voltage VEBO 5 VEmitter-Base Voltage IC Collector Current -Continuous 15

KTC4076TRANSISTOR (NPN) FEATURES Excellent hFE Linearity SOT323 Complementary to KTA2015 APPLICATIONS General Purpose Switching 1. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2. EMITTER Symbol Parameter Value Unit 3. COLLECTOR V Collector-Base Voltage 35 V CBOV Collector-Emitter Voltage 30 V CEOV Emitter-Base Voltage 5 V EBOI Coll

KTC4075 SOT-23 Transistor(NPN)SOT-231. BASE 2. EMITTER 3. COLLECTOR Features Excellent hFE linearity High hFE Low Noise Complementary to KTA2014 Dimensions in inches and (millimeters)MAXIMUM RATINGS(TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO 60 VCollector-Base Voltage VCEO 50 VCollector-Emitter Voltage VEBO 5 VEmitter-Base Volta

SMD Type TransistorsNPN TransistorsKTC4075 Features Excellent hFE Linearity Low Noise Complementary to KTA20141.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 50 V Emitter - Base Voltage VEBO 5 Collector Current - Continuous IC 150mA Bas

SMD Type TransistorsNPN TransistorsKTC4076 Features Excellent hFE Linearity Complementary to KTA20151.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 35 Collector - Emitter Voltage VCEO 30 V Emitter - Base Voltage VEBO 5 Collector Current - Continuous IC 500mA Base Current IB 50