KTC4527F . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

SEMICONDUCTOR KTC4527F TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR HIGH VOLTAGE AND HIGH RELIABILITY HIGH SPEED SWITCHING, WIDE SOA A C DIM MILLIMETERS U A 10.30 MAX B 15.30 MAX E C 2.70 0.30 S D 0.85 MAX MAXIMUM RATING (Ta=25 ) E 3.20 0.20 F 3.00 0.30 CHARACTERISTIC SYMBOL RATING UNIT G 12.30 MAX R H 0.75 MAX T VCBO Collector-Base Voltage 1100 V L L J 13.60 0.50 K 3

SEMICONDUCTOR KTC4520F TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE SWITCHING APPLICATION. A C DIM MILLIMETERS S FEATURES _ A 10.0 0.3 + _ + B 15.0 0.3 E Excellent Switching Times. C _ 2.70 0.3 + D 0.76+0.09/-0.05 ton=0.5 S(Max.), at IC=2A. S(Max.), tf=0.3 _ E 3.2 0.2 + High Collector Voltage VCEO=500V. _ F

SEMICONDUCTOR KTC4521F TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE SWITCHING APPLICATION. A C DIM MILLIMETERS S FEATURES _ A 10.0 0.3 + _ + B 15.0 0.3 E Excellent Switching Times. C _ 2.70 0.3 + D 0.76+0.09/-0.05 ton=0.5 S(Max.), tf=0.3 S(Max.), at IC=4A. _ E 3.2 0.2 + High Collector Voltage VCEO=500V. _ F 3.0 0.3

SEMICONDUCTOR KTC4511 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. A C FEATURES DIM MILLIMETERS S Complementary to KTA1725. _ A 10.0 + 0.3 _ + B 15.0 0.3 E C _ 2.70 0.3 + D 0.76+0.09/-0.05 _ E 3.2 0.2 + _ F 3.0 0.3 + _ 12.0 0.3 G + H 0.5+0.1/-0.05 _ + J 13.6 0.5 L L R K _ 3.7 0.2 + L MAXIMUM RATING (Ta=25 ) 1.2+0.25/-0