KTC5001D . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: KTC5001D
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 10 W
Tensión colector-base (Vcb): 30 V
Tensión colector-emisor (Vce): 20 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 10 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 150 MHz
Capacitancia de salida (Cc): 220 pF
Ganancia de corriente contínua (hfe): 120
Paquete / Cubierta: DPAK
Búsqueda de reemplazo de transistor bipolar KTC5001D
KTC5001D Datasheet (PDF)
ktc5001d l.pdf
SEMICONDUCTOR KTC5001D/LTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORFEATURESLow Collector Saturation Voltage. : VCE(sat)=0.13V(Typ.) at (IC=4A, IB=0.05A) AI C JLarge Collector CurrentDIM MILLIMETERS_A 6.60 + 0.2: IC=10A(dc) IC=15A(10ms, single pulse)_B 6.10 + 0.2_C 5.0 + 0.2Complementary to KTA1834D/L._D 1.10 + 0.2_E 2.70 + 0.2_F 2.30 + 0.1H 1
ktc5027f.pdf
SEMICONDUCTOR KTC5027FTECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTORHIGH VOLTAGE AND HIGH RELIABILITY HIGH SPEED SWITCHING, WIDE SOAMAXIMUM RATING (Ta=25 )CHARACTERISTIC SYMBOL RATING UNITVCBOCollector-Base Voltage 1100 VVCEOCollector-Emitter Voltage 800 VVEBOEmitter-Base Voltage 7 VICDC 3Collector Current AICPPulse 10IBBase Current 1.5 ACollector Power Diss
ktc5027.pdf
SEMICONDUCTOR KTC5027TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTORHIGH VOLTAGE AND HIGH RELIABILITY HIGH SPEED SWITCHING, WIDE SOAMAXIMUM RATING (Ta=25 )CHARACTERISTIC SYMBOL RATING UNITVCBOCollector-Base Voltage 1100 VVCEOCollector-Emitter Voltage 800 VVEBOEmitter-Base Voltage 7 VICDC 3Collector Current AICPPulse 10IBBase Current 1.5 ACollector Power Dissi
Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D882P , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
