KTC5001L Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: KTC5001L
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 10 W
Tensión colector-base (Vcb): 30 V
Tensión colector-emisor (Vce): 20 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 10 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 150 MHz
Capacitancia de salida (Cc): 220 pF
Ganancia de corriente contínua (hfe): 120
Paquete / Cubierta: IPAK
Búsqueda de reemplazo de KTC5001L
KTC5001L datasheet
ktc5001d l.pdf
SEMICONDUCTOR KTC5001D/L TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR FEATURES Low Collector Saturation Voltage. VCE(sat)=0.13V(Typ.) at (IC=4A, IB=0.05A) A I C J Large Collector Current DIM MILLIMETERS _ A 6.60 + 0.2 IC=10A(dc) IC=15A(10ms, single pulse) _ B 6.10 + 0.2 _ C 5.0 + 0.2 Complementary to KTA1834D/L. _ D 1.10 + 0.2 _ E 2.70 + 0.2 _ F 2.30 + 0.1 H 1
ktc5027f.pdf
SEMICONDUCTOR KTC5027F TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR HIGH VOLTAGE AND HIGH RELIABILITY HIGH SPEED SWITCHING, WIDE SOA MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT VCBO Collector-Base Voltage 1100 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC DC 3 Collector Current A ICP Pulse 10 IB Base Current 1.5 A Collector Power Diss
ktc5027.pdf
SEMICONDUCTOR KTC5027 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR HIGH VOLTAGE AND HIGH RELIABILITY HIGH SPEED SWITCHING, WIDE SOA MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT VCBO Collector-Base Voltage 1100 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC DC 3 Collector Current A ICP Pulse 10 IB Base Current 1.5 A Collector Power Dissi
Otros transistores... KTC4468 , KTC4511 , KTC4520F , KTC4521F , KTC4527F , KTC4666 , KTC4793 , KTC5001D , 2SC945 , KTC5027 , KTC5027F , KTC5103D , KTC5103L , KTC5197 , KTC5242 , KTC5242A , KTC5706 .
History: KTC5027 | MPS6560
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