KTC5001L Datasheet, Equivalent, Cross Reference Search
Type Designator: KTC5001L
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 10 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 150 MHz
Collector Capacitance (Cc): 220 pF
Forward Current Transfer Ratio (hFE), MIN: 120
Noise Figure, dB: -
Package: IPAK
KTC5001L Transistor Equivalent Substitute - Cross-Reference Search
KTC5001L Datasheet (PDF)
ktc5001d l.pdf
SEMICONDUCTOR KTC5001D/LTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORFEATURESLow Collector Saturation Voltage. : VCE(sat)=0.13V(Typ.) at (IC=4A, IB=0.05A) AI C JLarge Collector CurrentDIM MILLIMETERS_A 6.60 + 0.2: IC=10A(dc) IC=15A(10ms, single pulse)_B 6.10 + 0.2_C 5.0 + 0.2Complementary to KTA1834D/L._D 1.10 + 0.2_E 2.70 + 0.2_F 2.30 + 0.1H 1
ktc5027f.pdf
SEMICONDUCTOR KTC5027FTECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTORHIGH VOLTAGE AND HIGH RELIABILITY HIGH SPEED SWITCHING, WIDE SOAMAXIMUM RATING (Ta=25 )CHARACTERISTIC SYMBOL RATING UNITVCBOCollector-Base Voltage 1100 VVCEOCollector-Emitter Voltage 800 VVEBOEmitter-Base Voltage 7 VICDC 3Collector Current AICPPulse 10IBBase Current 1.5 ACollector Power Diss
ktc5027.pdf
SEMICONDUCTOR KTC5027TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTORHIGH VOLTAGE AND HIGH RELIABILITY HIGH SPEED SWITCHING, WIDE SOAMAXIMUM RATING (Ta=25 )CHARACTERISTIC SYMBOL RATING UNITVCBOCollector-Base Voltage 1100 VVCEOCollector-Emitter Voltage 800 VVEBOEmitter-Base Voltage 7 VICDC 3Collector Current AICPPulse 10IBBase Current 1.5 ACollector Power Dissi
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
