KTC802E . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: KTC802E
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 0.2 W
   Tensión colector-base (Vcb): 15 V
   Tensión colector-emisor (Vce): 12 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 0.5 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 320 MHz
   Capacitancia de salida (Cc): 7.5 pF
   Ganancia de corriente contínua (hfe): 270
   Paquete / Cubierta: TES6

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KTC802E Datasheet (PDF)

..1. Size:366K kec
ktc802e.pdf

SEMICONDUCTOR KTC802ETECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION. BB1FEATURESHigh Current.1 6 DIM MILLIMETERSLow VCE(sat) . _A 1.6 + 0.05_A1 1.0 + 0.05: VCE(sat) 250mV at IC=200mA/IB=10mA. 52_B 1.6 + 0.05_B1 1.2 + 0.05Complementary to KTA702E.C 0.503 4_D 0.2 + 0.05_H 0.5 + 0.05_J 0.12 + 0.05

9.1. Size:449K kec
ktc801f.pdf

SEMICONDUCTOR KTC801FTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.FEATURESBThin fine pitch super mini 6pin.B1Excellent temperature response between these 2 transistor.DIM MILLIMETERS_+A 1.0 0.05High pairing property in hFE._+A1 0.7 0.051 6The follwing characteristics are common for Q1, Q2. _+B 1.0 0.05_

9.2. Size:48K kec
ktc8050a.pdf

SEMICONDUCTOR KTC8050ATECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH CURRENT APPLICATION. B CFEATUREComplementary to KTC8550A.N DIM MILLIMETERSA 4.70 MAXEKB 4.80 MAXMAXIMUM RATING (Ta=25) GC 3.70 MAXDD 0.45CHARACTERISTIC SYMBOL RATING UNITE 1.00F 1.27VCBOCollector-Base Voltage 35 VG 0.85H 0.45VCEOCollector-Emitter Voltage 30 V_HJ 14.0

9.3. Size:40K kec
ktc8050s.pdf

SEMICONDUCTOR KTC8050STECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH CURRENT APPLICATION. FEATUREEL B LComplementary to KTC8550S.DIM MILLIMETERS_A 2.93 0.20+B 1.30+0.20/-0.15C 1.30 MAX23 D 0.45+0.15/-0.05E 2.40+0.30/-0.20MAXIMUM RATING (Ta=25 )1G 1.90H 0.95CHARACTERISTIC SYMBOL RATING UNITJ 0.13+0.10/-0.05K 0.00 ~ 0.10VCBOCollector-Base Voltag

9.4. Size:42K kec
ktc801e.pdf

SEMICONDUCTOR KTC801ETECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION. BB1FEATURESA super-minimold package houses 2 transistor.1 6 DIM MILLIMETERSExcellent temperature response between these 2 transistor. _A 1.6 + 0.05_A1 1.0 + 0.05High pairing property in hFE. 52_B 1.6 + 0.05_B1 1.2 + 0.05The follwing characteri

9.5. Size:46K kec
ktc801u.pdf

SEMICONDUCTOR KTC801UTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.BB1FEATURESDIM MILLIMETERS1 6_A super-minimold package houses 2 transistor. A 2.00 + 0.20_2 5 A1 1.3 + 0.1Excellent temperature response between these 2 transistor._B 2.1 + 0.13 4 D _B1 1.25 + 0.1High pairing property in hFE.C 0.65T

9.6. Size:284K kec
ktc8050.pdf