KTC802E Specs and Replacement

Type Designator: KTC802E

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Base Voltage |Vcb|: 15 V

Maximum Collector-Emitter Voltage |Vce|: 12 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 0.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 320 MHz

Collector Capacitance (Cc): 7.5 pF

Forward Current Transfer Ratio (hFE), MIN: 270

Noise Figure, dB: -

Package: TES6

 KTC802E Substitution

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KTC802E datasheet

 ..1. Size:366K  kec

ktc802e.pdf pdf_icon

KTC802E

SEMICONDUCTOR KTC802E TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B B1 FEATURES High Current. 1 6 DIM MILLIMETERS Low VCE(sat) . _ A 1.6 + 0.05 _ A1 1.0 + 0.05 VCE(sat) 250mV at IC=200mA/IB=10mA. 5 2 _ B 1.6 + 0.05 _ B1 1.2 + 0.05 Complementary to KTA702E. C 0.50 3 4 _ D 0.2 + 0.05 _ H 0.5 + 0.05 _ J 0.12 + 0.05 ... See More ⇒

 9.1. Size:449K  kec

ktc801f.pdf pdf_icon

KTC802E

SEMICONDUCTOR KTC801F TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES B Thin fine pitch super mini 6pin. B1 Excellent temperature response between these 2 transistor. DIM MILLIMETERS _ + A 1.0 0.05 High pairing property in hFE. _ + A1 0.7 0.05 1 6 The follwing characteristics are common for Q1, Q2. _ + B 1.0 0.05 _... See More ⇒

 9.2. Size:48K  kec

ktc8050a.pdf pdf_icon

KTC802E

SEMICONDUCTOR KTC8050A TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT APPLICATION. B C FEATURE Complementary to KTC8550A. N DIM MILLIMETERS A 4.70 MAX E K B 4.80 MAX MAXIMUM RATING (Ta=25 ) G C 3.70 MAX D D 0.45 CHARACTERISTIC SYMBOL RATING UNIT E 1.00 F 1.27 VCBO Collector-Base Voltage 35 V G 0.85 H 0.45 VCEO Collector-Emitter Voltage 30 V _ H J 14.0... See More ⇒

 9.3. Size:40K  kec

ktc8050s.pdf pdf_icon

KTC802E

SEMICONDUCTOR KTC8050S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT APPLICATION. FEATURE E L B L Complementary to KTC8550S. DIM MILLIMETERS _ A 2.93 0.20 + B 1.30+0.20/-0.15 C 1.30 MAX 2 3 D 0.45+0.15/-0.05 E 2.40+0.30/-0.20 MAXIMUM RATING (Ta=25 ) 1 G 1.90 H 0.95 CHARACTERISTIC SYMBOL RATING UNIT J 0.13+0.10/-0.05 K 0.00 0.10 VCBO Collector-Base Voltag... See More ⇒

Detailed specifications: KTC5707L, KTC601E, KTC601F, KTC601UGR, KTC611T, KTC801E, KTC801F, KTC801U, 2SD669, KTC8050S, KTC811E, KTC811T, KTC811U, KTC812E, KTC812U, KTC813U, KTC815

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