KTD1824 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: KTD1824
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.1 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 40 V
Tensión emisor-base (Veb): 15 V
Corriente del colector DC máxima (Ic): 0.05 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 120 MHz
Ganancia de corriente contínua (hFE): 400
Encapsulados: USM
Búsqueda de reemplazo de KTD1824
- Selecciónⓘ de transistores por parámetros
KTD1824 datasheet
ktd1824.pdf
SEMICONDUCTOR KTD1824 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR FOR LOW-FREQUENCY AMPLIFICATION. FEATURES E High foward current transfer ratio hFE. M B M DIM MILLIMETERS Low collector to emitter saturation voltage VCE(sat). _ A + 2.00 0.20 D 2 High emitter to base voltage VEBO. _ + B 1.25 0.15 _ + C 0.90 0.10 Low noise voltage NV. 3 1 D 0.3+0.10/-0.05 _
ktd1824e.pdf
SEMICONDUCTOR KTD1824E TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR FOR LOW-FREQUENCY AMPLIFICATION. FEATURES E High foward current transfer ratio hFE. B Low collector to emitter saturation voltage VCE(sat). DIM MILLIMETERS _ + A 1.60 0.10 D High emitter to base voltage VEBO. _ + 2 B 0.85 0.10 _ + C 0.70 0.10 Low noise voltage NV. 3 1 D 0.27+0.10/-0.05 _ ESM type packa
ktd1898.pdf
KTD1898 1A , 100V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-89 FEATURES Small Flat Package 4 General Purpose Application 1 2 3 CLASSIFICATION OF hFE(1) B C A E E C Product-Rank KTD1898-O KTD1898-Y KTD1898-GR Range 70 140 120 240 200 400 B D Marking ZO ZY ZG
ktd1898.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L KTD1898 TRANSISTOR (NPN) 1. BASE FEATURES 2. COLLECTOR Small Flat Package General Purpose Application 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEB
Otros transistores... KTD1047B, KTD1347, KTD1411, KTD1415V, KTD1510, KTD1530, KTD1624, KTD1691, C1815, KTD1824E, KTD1854T, KTD1863, KTD1882, KTD2686, KTD2854, KTD545, KTD600K
History: NSBC115TDP6T5G | KT8272V
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
Popular searches
m3056m mosfet | skd502t mosfet | tip 35 transistor | bu2508df | 2n2222a transistor equivalent | 2sc2509 | 2n1815 | 2sa1103











