KTN2907AU . Datasheet. Equivalente. Reemplazo. Todos los transistores. Hoja de especificaciones. Principales características

KTN2907AU Datasheet (PDF)

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SEMICONDUCTOR KTN2907U/AUTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.EFEATURESM B MDIM MILLIMETERSLow Leakage Current_+A 2.00 0.20D2: ICEX=-50nA(Max.) ; VCE=-30V, VEB=-0.5V._+B 1.25 0.15_+C 0.90 0.10Low Saturation Voltage 31D 0.3+0.10/-0.05_+: VCE(sat)=-0.4V(Max.) ; IC=-150mA, IB=-15mA.

6.1. Size:704K kec
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SEMICONDUCTOR KTN2907S/ASTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.EL B LFEATURESDIM MILLIMETERS_Low Leakage Current A 2.93 0.20+B 1.30+0.20/-0.15: ICEX=-50nA(Max.) ; VCE=-30V, VEB=-0.5V.C 1.30 MAX23 D 0.40+0.15/-0.05Low Saturation Voltage E 2.40+0.30/-0.201: VCE(sat)=-0.4V(Max.) ; IC=-150mA, IB=-15m

6.2. Size:83K kec
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SEMICONDUCTOR KTN2907AETECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.EFEATURESBLow Leakage CurrentDDIM MILLIMETERS: ICEX=-50nA(Max.) ; VCE=-30V, VEB=-0.5V.2_+A 1.60 0.10Low Saturation Voltage _+B 0.85 0.1031_C 0.70 0.10+: VCE(sat)=-0.4V(Max.) ; IC=-150mA, IB=-15mA.D 0.27+0.10/-0.05_Complementar

7.1. Size:577K kec
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SEMICONDUCTOR KTN2907S/ASTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.EFEATURES L B LDIM MILLIMETERSLow Leakage Current_+2.93 0.20AB 1.30+0.20/-0.15: ICEX=-50nA(Max.) ; VCE=-30V, VEB=-0.5V.C 1.30 MAX2Low Saturation Voltage 3 D 0.45+0.15/-0.05E 2.40+0.30/-0.20: VCE(sat)=-0.4V(Max.) ; IC=-150mA, IB=-15mA.