KTX101E . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: KTX101E
Material: Si
Polaridad de transistor: NPN*PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.2 W
Tensión colector-base (Vcb): 60 V
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.15 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 80 MHz
Capacitancia de salida (Cc): 2 pF
Ganancia de corriente contínua (hfe): 120
Paquete / Cubierta: TES6
Búsqueda de reemplazo de transistor bipolar KTX101E
KTX101E Datasheet (PDF)
ktx101e.pdf
SEMICONDUCTOR KTX101ETECHNICAL DATA EPITAXIAL PLANAR NPN/PNP TRANSISTORGENERAL PURPOSE APPLICATION.BB1FEATURESIncluding two devices in TES6.(Thin Extreme Super mini type with 6 pin.)1 6 DIM MILLIMETERSSimplify circuit design. _A 1.6 + 0.05_A1 1.0 + 0.05Reduce a quantity of parts and manufacturing process.2 5_B 1.6 + 0.05_B1 1.2 + 0.05C 0.503 4_D 0.2 +
ktx101u.pdf
SEMICONDUCTOR KTX101UTECHNICAL DATA EPITAXIAL PLANAR NPN/PNP TRANSISTORGENERAL PURPOSE APPLICATION.FEATURESBIncluding two devices in US6.B1(Ultra Super mini type with 6 leads)DIM MILLIMETERS1 6_Simplify circuit design. A 2.00 + 0.20_2 5 A1 1.3 + 0.1Reduce a quantity of parts and manufacturing process._B 2.1 + 0.13 4 D _B1 1.25 + 0.1C 0.65D 0.2+0.10/-0.0
ktx102e.pdf
SEMICONDUCTOR KTX102ETECHNICAL DATA EPITAXIAL PLANAR PNP/NPN TRANSISTORGENERAL PURPOSE APPLICATION.BB1FEATURESIncluding two devices in TES6.(Thin Extreme Super mini type with 6 Pin.)1 6 DIM MILLIMETERSSimplify circuit design. _A 1.6 + 0.05_A1 1.0 + 0.05Reduce a quantity of parts and manufacturing process.2 5_B 1.6 + 0.05_B1 1.2 + 0.05C 0.503 4_D 0.2 +
ktx103e.pdf
SEMICONDUCTOR KTX103ETECHNICAL DATA EPITAXIAL PLANAR NPN/PNP TRANSISTORGENERAL PURPOSE APPLICATION.BB1FEATURESIncluding two devices in TES6.(Thin Extreme Super mini type with 6 pin.)1 6 DIM MILLIMETERSSimplify circuit design. _A 1.6 + 0.05_A1 1.0 + 0.05Reduce a quantity of parts and manufacturing process.2 5_B 1.6 + 0.05_B1 1.2 + 0.05C 0.503 4_D 0.2
ktx102u.pdf
SEMICONDUCTOR KTX102UTECHNICAL DATA EPITAXIAL PLANAR PNP/NPN TRANSISTORGENERAL PURPOSE APPLICATION.FEATURESBIncluding two devices in US6.B1(Ultra Super mini type with 6 leads)DIM MILLIMETERS1 6_Simplify circuit design. A 2.00 + 0.20_2 5 A1 1.3 + 0.1Reduce a quantity of parts and manufacturing process._B 2.1 + 0.13 4 D _B1 1.25 + 0.1C 0.65D 0.2+0.10/-0.0
Otros transistores... 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N3055 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050 | HSA1037AKS