KTX301E Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: KTX301E

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.1 W

Tensión colector-base (Vcb): 50 V

Tensión colector-emisor (Vce): 50 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.15 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 80 MHz

Capacitancia de salida (Cc): 4 pF

Ganancia de corriente contínua (hFE): 120

Encapsulados: TESV

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KTX301E datasheet

 ..1. Size:31K  kec
 ktx301e.pdf pdf_icon

KTX301E

KTX301E SEMICONDUCTOR EPITAXIAL PLANAR PNP TRANSISTOR TECHNICAL DATA SILICON EPITAXIAL PLANAR TYPE DIODE GENERAL PURPOSE APPLICATION. ULTRA HIGH SPEED SWITCHING APPLICATION. B B1 FEATURES Including two(TR, Diode) devices in TESV. (Thin Extreme Super mini type with 5pin.) 1 5 DIM MILLIMETERS _ A 1.6 0.05 + Simplify circuit design. _ + A1 1.0 0.05 2 _ + B 1.6 0.05 Reduce

 8.1. Size:31K  kec
 ktx301u.pdf pdf_icon

KTX301E

KTX301U SEMICONDUCTOR EPITAXIAL PLANAR PNP TRANSISTOR TECHNICAL DATA SILICON EPITAXIAL PLANAR TYPE DIODE GENERAL PURPOSE APPLICATION. ULTRA HIGH SPEED SWITCHING APPLICATION. B FEATURES B1 Including two(TR, Diode) devices in USV. 1 5 DIM MILLIMETERS _ + (Ultra Super Mini type with 5 leads) 2.00 0.20 A _ 2 + 1.3 0.1 A1 Simplify circuit design. _ + B 2.1 0.1 3 4 D _ +

 9.1. Size:48K  kec
 ktx302u.pdf pdf_icon

KTX301E

KTX302U SEMICONDUCTOR EPITAXIAL PLANAR PNP TRANSISTOR TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE GENERAL PURPOSE APPLICATION. LOW VOLTAGE HIGH SPEED SWITCHING. B FEATURES B1 Including two(TR, Diode) devices in USV. 1 5 DIM MILLIMETERS _ (Ultra Super Mini type with 5 leads) A 2.00 0.20 + 2 _ + A1 1.3 0.1 Simplify circuit design. _ + B 2.1 0.1 3 4 D _ + B1 1.25 0.1 Redu

 9.2. Size:46K  kec
 ktx303u.pdf pdf_icon

KTX301E

KTX303U SEMICONDUCTOR EPITAXIAL PLANAR PNP TRANSISTOR TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE SWITCHING APPLICATION. LOW VOLTAGE HIGH SPEED SWITCHING. B FEATURES B1 Including two(TR, Diode) devices in USV. 1 5 DIM MILLIMETERS _ (Ultra Super Mini type with 5 leads) A 2.00 0.20 + 2 _ + A1 1.3 0.1 Simplify circuit design. _ + B 2.1 0.1 3 4 D _ + B1 1.25 0.1 Reduce a q

MOSTRAR MÁS

Otros transistores... KTX102U, KTX103E, KTX111T, KTX112T, KTX201E, KTX201U, KTX215E, KTX216U, MJE340, KTX301U, KTX302U, KTX303U, KTX311T, KTX312T, KTX321U, KTX401E, KTX401U