KTX302U Todos los transistores

 

KTX302U . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: KTX302U
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.1 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.15 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 80 MHz
   Capacitancia de salida (Cc): 4 pF
   Ganancia de corriente contínua (hfe): 120
   Paquete / Cubierta: USV
     - Selección de transistores por parámetros

 

KTX302U Datasheet (PDF)

 ..1. Size:48K  kec
ktx302u.pdf pdf_icon

KTX302U

KTX302USEMICONDUCTOREPITAXIAL PLANAR PNP TRANSISTORTECHNICAL DATASCHOTTKY BARRIER TYPE DIODEGENERAL PURPOSE APPLICATION.LOW VOLTAGE HIGH SPEED SWITCHING.BFEATURES B1Including two(TR, Diode) devices in USV.1 5DIM MILLIMETERS_(Ultra Super Mini type with 5 leads) A 2.00 0.20+2 _+A1 1.3 0.1Simplify circuit design. _+B 2.1 0.13 4 D_+B1 1.25 0.1Redu

 9.1. Size:31K  kec
ktx301e.pdf pdf_icon

KTX302U

KTX301ESEMICONDUCTOREPITAXIAL PLANAR PNP TRANSISTORTECHNICAL DATASILICON EPITAXIAL PLANAR TYPE DIODEGENERAL PURPOSE APPLICATION.ULTRA HIGH SPEED SWITCHING APPLICATION.BB1FEATURESIncluding two(TR, Diode) devices in TESV.(Thin Extreme Super mini type with 5pin.)1 5 DIM MILLIMETERS_A 1.6 0.05+Simplify circuit design. _+A1 1.0 0.052_+B 1.6 0.05Reduce

 9.2. Size:46K  kec
ktx303u.pdf pdf_icon

KTX302U

KTX303USEMICONDUCTOREPITAXIAL PLANAR PNP TRANSISTORTECHNICAL DATASCHOTTKY BARRIER TYPE DIODESWITCHING APPLICATION.LOW VOLTAGE HIGH SPEED SWITCHING.BFEATURES B1Including two(TR, Diode) devices in USV.1 5DIM MILLIMETERS_(Ultra Super Mini type with 5 leads) A 2.00 0.20+2 _+A1 1.3 0.1Simplify circuit design. _+B 2.1 0.13 4 D_+B1 1.25 0.1Reduce a q

 9.3. Size:31K  kec
ktx301u.pdf pdf_icon

KTX302U

KTX301USEMICONDUCTOREPITAXIAL PLANAR PNP TRANSISTORTECHNICAL DATASILICON EPITAXIAL PLANAR TYPE DIODEGENERAL PURPOSE APPLICATION.ULTRA HIGH SPEED SWITCHING APPLICATION.BFEATURES B1Including two(TR, Diode) devices in USV.1 5DIM MILLIMETERS_+(Ultra Super Mini type with 5 leads) 2.00 0.20A_2+1.3 0.1A1Simplify circuit design. _+B 2.1 0.13 4 D_+

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: DTA143ZKAFRA | DTL3512 | 2SC6026CT | KSC2756Y | KSB795 | MUN5130DW1 | 2SC4629

 

 
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