KTX302U Specs and Replacement

Type Designator: KTX302U

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.1 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.15 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 80 MHz

Collector Capacitance (Cc): 4 pF

Forward Current Transfer Ratio (hFE), MIN: 120

Noise Figure, dB: -

Package: USV

 KTX302U Substitution

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KTX302U datasheet

 ..1. Size:48K  kec

 ktx302u.pdf pdf_icon

KTX302U

KTX302U SEMICONDUCTOR EPITAXIAL PLANAR PNP TRANSISTOR TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE GENERAL PURPOSE APPLICATION. LOW VOLTAGE HIGH SPEED SWITCHING. B FEATURES B1 Including two(TR, Diode) devices in USV. 1 5 DIM MILLIMETERS _ (Ultra Super Mini type with 5 leads) A 2.00 0.20 + 2 _ + A1 1.3 0.1 Simplify circuit design. _ + B 2.1 0.1 3 4 D _ + B1 1.25 0.1 Redu... See More ⇒

 9.1. Size:31K  kec

 ktx301e.pdf pdf_icon

KTX302U

KTX301E SEMICONDUCTOR EPITAXIAL PLANAR PNP TRANSISTOR TECHNICAL DATA SILICON EPITAXIAL PLANAR TYPE DIODE GENERAL PURPOSE APPLICATION. ULTRA HIGH SPEED SWITCHING APPLICATION. B B1 FEATURES Including two(TR, Diode) devices in TESV. (Thin Extreme Super mini type with 5pin.) 1 5 DIM MILLIMETERS _ A 1.6 0.05 + Simplify circuit design. _ + A1 1.0 0.05 2 _ + B 1.6 0.05 Reduce ... See More ⇒

 9.2. Size:46K  kec

 ktx303u.pdf pdf_icon

KTX302U

KTX303U SEMICONDUCTOR EPITAXIAL PLANAR PNP TRANSISTOR TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE SWITCHING APPLICATION. LOW VOLTAGE HIGH SPEED SWITCHING. B FEATURES B1 Including two(TR, Diode) devices in USV. 1 5 DIM MILLIMETERS _ (Ultra Super Mini type with 5 leads) A 2.00 0.20 + 2 _ + A1 1.3 0.1 Simplify circuit design. _ + B 2.1 0.1 3 4 D _ + B1 1.25 0.1 Reduce a q... See More ⇒

 9.3. Size:31K  kec

 ktx301u.pdf pdf_icon

KTX302U

KTX301U SEMICONDUCTOR EPITAXIAL PLANAR PNP TRANSISTOR TECHNICAL DATA SILICON EPITAXIAL PLANAR TYPE DIODE GENERAL PURPOSE APPLICATION. ULTRA HIGH SPEED SWITCHING APPLICATION. B FEATURES B1 Including two(TR, Diode) devices in USV. 1 5 DIM MILLIMETERS _ + (Ultra Super Mini type with 5 leads) 2.00 0.20 A _ 2 + 1.3 0.1 A1 Simplify circuit design. _ + B 2.1 0.1 3 4 D _ + ... See More ⇒

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Detailed specifications: KTX111T, KTX112T, KTX201E, KTX201U, KTX215E, KTX216U, KTX301E, KTX301U, BD335, KTX303U, KTX311T, KTX312T, KTX321U, KTX401E, KTX401U, KTX402U, KTX403U

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