KTX401E . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: KTX401E
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.1 W
Tensión colector-base (Vcb): 60 V
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.15 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 80 MHz
Capacitancia de salida (Cc): 2 pF
Ganancia de corriente contínua (hfe): 120
Paquete / Cubierta: TESV
Búsqueda de reemplazo de transistor bipolar KTX401E
KTX401E Datasheet (PDF)
ktx401e.pdf
KTX401ESEMICONDUCTOREPITAXIAL PLANAR NPN TRANSISTORTECHNICAL DATASILICON EPITAXIAL PLANAR TYPE DIODEGENERAL PURPOSE APPLICATION.ULTRA HIGH SPEED SWITCHING APPLICATION.BB1FEATURESIncluding two(TR, Diode) devices in TESV.(Thin Extreme Super mini type with 5pin.)1 5 DIM MILLIMETERS_A 1.6 0.05+Simplify circuit design. _+A1 1.0 0.052_+B 1.6 0.05Reduce
ktx401u.pdf
KTX401USEMICONDUCTOREPITAXIAL PLANAR NPN TRANSISTORTECHNICAL DATASILICON EPITAXIAL PLANAR TYPE DIODEGENERAL PURPOSE APPLICATION.ULTRA HIGH SPEED SWITCHING APPLICATION.BFEATURES B1Including two(TR, Diode) devices in USV.1 5DIM MILLIMETERS_+(Ultra Super Mini type with 5 leads) 2.00 0.20A_2+1.3 0.1A1Simplify circuit design. _+B 2.1 0.13 4 D_
ktx402u.pdf
KTX402USEMICONDUCTOREPITAXIAL PLANAR NPN TRANSISTORTECHNICAL DATASCHOTTKY BARRIER TYPE DIODEGENERAL PURPOSE APPLICATION.LOW VOLTAGE HIGH SPEED SWITCHING.BFEATURES B1Including two(TR, Diode) devices in USV.1 5DIM MILLIMETERS_(Ultra Super Mini type with 5 leads) A 2.00 0.20+2 _+A1 1.3 0.1Simplify circuit design. _+B 2.1 0.13 4 D_+B1 1.25 0.1
ktx403u.pdf
KTX403USEMICONDUCTOREPITAXIAL PLANAR NPN TRANSISTORTECHNICAL DATASCHOTTKY BARRIER TYPE DIODESWITCHING APPLICATION.LOW VOLTAGE HIGH SPEED SWITCHING.BFEATURES B1Including two(TR, Diode) devices in USV.1 5DIM MILLIMETERS_(Ultra Super Mini type with 5 leads) A 2.00 0.20+2 _+A1 1.3 0.1Simplify circuit design. _+B 2.1 0.13 4 D_+B1 1.25 0.1Reduce a q
Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050