All Transistors. KTX401E Datasheet

 

KTX401E Datasheet, Equivalent, Cross Reference Search


   Type Designator: KTX401E
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.1 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.15 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 80 MHz
   Collector Capacitance (Cc): 2 pF
   Forward Current Transfer Ratio (hFE), MIN: 120
   Noise Figure, dB: -
   Package: TESV

 KTX401E Transistor Equivalent Substitute - Cross-Reference Search

   

KTX401E Datasheet (PDF)

 ..1. Size:31K  kec
ktx401e.pdf

KTX401E
KTX401E

KTX401ESEMICONDUCTOREPITAXIAL PLANAR NPN TRANSISTORTECHNICAL DATASILICON EPITAXIAL PLANAR TYPE DIODEGENERAL PURPOSE APPLICATION.ULTRA HIGH SPEED SWITCHING APPLICATION.BB1FEATURESIncluding two(TR, Diode) devices in TESV.(Thin Extreme Super mini type with 5pin.)1 5 DIM MILLIMETERS_A 1.6 0.05+Simplify circuit design. _+A1 1.0 0.052_+B 1.6 0.05Reduce

 8.1. Size:28K  kec
ktx401u.pdf

KTX401E
KTX401E

KTX401USEMICONDUCTOREPITAXIAL PLANAR NPN TRANSISTORTECHNICAL DATASILICON EPITAXIAL PLANAR TYPE DIODEGENERAL PURPOSE APPLICATION.ULTRA HIGH SPEED SWITCHING APPLICATION.BFEATURES B1Including two(TR, Diode) devices in USV.1 5DIM MILLIMETERS_+(Ultra Super Mini type with 5 leads) 2.00 0.20A_2+1.3 0.1A1Simplify circuit design. _+B 2.1 0.13 4 D_

 9.1. Size:58K  kec
ktx402u.pdf

KTX401E
KTX401E

KTX402USEMICONDUCTOREPITAXIAL PLANAR NPN TRANSISTORTECHNICAL DATASCHOTTKY BARRIER TYPE DIODEGENERAL PURPOSE APPLICATION.LOW VOLTAGE HIGH SPEED SWITCHING.BFEATURES B1Including two(TR, Diode) devices in USV.1 5DIM MILLIMETERS_(Ultra Super Mini type with 5 leads) A 2.00 0.20+2 _+A1 1.3 0.1Simplify circuit design. _+B 2.1 0.13 4 D_+B1 1.25 0.1

 9.2. Size:47K  kec
ktx403u.pdf

KTX401E
KTX401E

KTX403USEMICONDUCTOREPITAXIAL PLANAR NPN TRANSISTORTECHNICAL DATASCHOTTKY BARRIER TYPE DIODESWITCHING APPLICATION.LOW VOLTAGE HIGH SPEED SWITCHING.BFEATURES B1Including two(TR, Diode) devices in USV.1 5DIM MILLIMETERS_(Ultra Super Mini type with 5 leads) A 2.00 0.20+2 _+A1 1.3 0.1Simplify circuit design. _+B 2.1 0.13 4 D_+B1 1.25 0.1Reduce a q

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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