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MPS8550 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MPS8550
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.625 W
   Tensión colector-base (Vcb): 40 V
   Tensión colector-emisor (Vce): 25 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 1.5 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 200 MHz
   Capacitancia de salida (Cc): 15 pF
   Ganancia de corriente contínua (hfe): 85
   Paquete / Cubierta: TO92
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MPS8550 Datasheet (PDF)

 ..1. Size:47K  kec
mps8550.pdf pdf_icon

MPS8550

SEMICONDUCTOR MPS8550TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORHIGH CURRENT APPLICATION. B CFEATUREComplementary to MPS8050.N DIM MILLIMETERSA 4.70 MAXEKB 4.80 MAXGMAXIMUM RATING (Ta=25)C 3.70 MAXDD 0.45CHARACTERISTIC SYMBOL RATING UNITE 1.00F 1.27VCBO -40 VCollector-Base VoltageG 0.85H 0.45VCEO -25 VCollector-Emitter Voltage _HJ 14.0

 0.1. Size:350K  kec
mps8550s.pdf pdf_icon

MPS8550

SEMICONDUCTOR MPS8550STECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORHIGH CURRENT APPLICATION. EFEATUREL B LComplementary to MPS8050S. DIM MILLIMETERS_+A 2.93 0.20B 1.30+0.20/-0.15C 1.30 MAX23 D 0.40+0.15/-0.05E 2.40+0.30/-0.201G 1.90MAXIMUM RATING (Ta=25)H 0.95J 0.13+0.10/-0.05CHARACTERISTIC SYMBOL RATING UNITK 0.00 ~ 0.10QL 0.55P PM 0.20 M

 0.2. Size:603K  kec
mps8550sc.pdf pdf_icon

MPS8550

SEMICONDUCTOR MPS8550SCTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORHIGH CURRENT APPLICATION. FEATUREComplementary to MPS8050SC.MAXIMUM RATING (Ta=25)CHARACTERISTIC SYMBOL RATING UNITVCBO -40 VCollector-Base VoltageVCEO -25 VCollector-Emitter VoltageVEBOEmitter-Base Voltage -5 VICCollector Current -1,200 mAPC *Collector Power Dissipation 350 mWTjJunctio

 9.1. Size:100K  fairchild semi
mps8598.pdf pdf_icon

MPS8550

September 2007MPS8598PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 68. TO-9211. Emitter 2. Base 3. CollectorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value UnitsVCBO Collector-Base Voltage 60 VVCEO Collector-Emitter V

Otros transistores... 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SD2499 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .

History: NB221F | DTA114YMFHA | RN2307 | BF321D | GSTU4030 | 2N3055HV | D62T8040

 

 
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