KRA105 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: KRA105
Material: Si
Polaridad de transistor: Pre-Biased-PNP
Resistencia de Entrada Base R1 = 2.2 kOhm
Resistencia Base-Emisor R2 = 47 kOhm
Ratio típica de resistencia R1/R2 = 0.047
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.625 W
Tensión colector-emisor (Vce): 50 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 200 MHz
Ganancia de corriente contínua (hFE): 80
Encapsulados: TO-92
Búsqueda de reemplazo de KRA105
- Selecciónⓘ de transistores por parámetros
KRA105 datasheet
kra107m-kra109m.pdf
SEMICONDUCTOR KRA107M KRA109M TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B FEATURES With Built-in Bias Resistors Simplify Circuit Design DIM MILLIMETERS O A 3.20 MAX Reduce a Quantity of Parts and Manufacturing Process H M B 4.30 MAX C 0.55 MAX _ D 2.40 + 0.15 E 1.27 F 2.30 C _ + G 14.00
kra107s-kra109s.pdf
SEMICONDUCTOR KRA107S KRA109S TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. E L B L FEATURES DIM MILLIMETERS _ + A 2.93 0.20 With Built-in Bias Resistors. B 1.30+0.20/-0.15 C 1.30 MAX Simplify Circuit Design. 2 3 D 0.40+0.15/-0.05 Reduce a Quantity of Parts and Manufacturing Process. E 2.40+0.30
kra107-kra109.pdf
SEMICONDUCTOR KRA107 KRA109 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B C FEATURES With Built-in Bias Resistors Simplify Circuit Design Reduce a Quantity of Parts and Manufacturing Process N DIM MILLIMETERS A 4.70 MAX E K B 4.80 MAX G C 3.70 MAX D D 0.45 E 1.00 F 1.27 G 0.85 EQUIVALENT CI
kra101s-kra106s.pdf
SEMICONDUCTOR KRA101S KRA106S TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. E L B L FEATURES DIM MILLIMETERS With Built-in Bias Resistors. _ + A 2.93 0.20 B 1.30+0.20/-0.15 Simplify Circuit Design. C 1.30 MAX 2 3 D 0.40+0.15/-0.05 Reduce a Quantity of Parts and Manufacturing Process. E 2.40+0.30/-0
Otros transistores... KTC812T, KTC814U, KRA101S, KRA102S, KRA103, KRA103S, KRA104, KRA104S, TIP120, KRA105S, KRA106, KRA106S, KRA107, KRA107S, KRA108, KRA108S, KRA109
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