KRA112S . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: KRA112S
Código: PN
Material: Si
Polaridad de transistor: Pre-Biased-PNP
Resistencia de Entrada Base R1 = 100 kOhm
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.2 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 250 MHz
Ganancia de corriente contínua (hfe): 120
Paquete / Cubierta: SOT-23
Búsqueda de reemplazo de transistor bipolar KRA112S
KRA112S Datasheet (PDF)
kra116-kra122.pdf
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kra116s-kra122s.pdf
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kra116m-kra122m.pdf
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kra110s-kra114s.pdf
SEMICONDUCTOR KRA110S~KRA114SEPITAXIAL PLANAR PNP TRANSISTORTECHNICAL DATASWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. EL B LFEATURESDIM MILLIMETERS_+A 2.93 0.20With Built-in Bias Resistors.B 1.30+0.20/-0.15Simplify Circuit Design. C 1.30 MAX23 D 0.40+0.15/-0.05Reduce a Quantity of Parts and Manufacturing Process.E 2.40+0.30/
kra110m-kra114m.pdf
SEMICONDUCTOR KRA110M~KRA114MEPITAXIAL PLANAR PNP TRANSISTORTECHNICAL DATASWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. BFEATURESWith Built-in Bias Resistors.Simplify Circuit Design.DIM MILLIMETERSOA 3.20 MAXReduce a Quantity of Parts and Manufacturing Process.HM B 4.30 MAXC 0.55 MAX_D 2.40 + 0.15E 1.27F 2.30C_+G 14.
kra119s.pdf
SEMICONDUCTOR KRA119STECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORSWITCHING APPLICATION.INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONEFEATURESL B LWith Built-in Bias Resistors.DIM MILLIMETERS_+A 2.93 0.20Simplify Circuit Design.B 1.30+0.20/-0.15C 1.30 MAXReduce a Quantity of Parts and Manufacturing Process.23 D 0.40+0.15/-0.05E 2.40+0.30/-0.201G
kra110-kra114.pdf
SEMICONDUCTOR KRA110~KRA114EPITAXIAL PLANAR PNP TRANSISTORTECHNICAL DATASWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B CFEATURESWith Built-in Bias Resistors.Simplify Circuit Design.Reduce a Quantity of Parts and Manufacturing Process.N DIM MILLIMETERSA 4.70 MAXEKB 4.80 MAXGC 3.70 MAXDD 0.45E 1.00F 1.27EQUIVALENT CIRCUIT
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
