Биполярный транзистор KRA112S - описание производителя. Основные параметры. Даташиты.
Наименование производителя: KRA112S
Маркировка: PN
Тип материала: Si
Полярность: Pre-Biased-PNP
Встроенный резистор цепи смещения R1 = 100 kOhm
Максимальная рассеиваемая мощность (Pc): 0.2 W
Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 250 MHz
Статический коэффициент передачи тока (hfe): 120
Корпус транзистора: SOT-23
KRA112S Datasheet (PDF)
kra116-kra122.pdf
SEMICONDUCTOR KRA116~KRA122TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORSWITCHING APPLICATION.INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONB CFEATURESWith Built-in Bias Resistors.Simplify Circuit Design.Reduce a Quantity of Parts and Manufacturing Process.N DIM MILLIMETERSA 4.70 MAXEKB 4.80 MAXGC 3.70 MAXDD 0.45E 1.00F 1.27G 0.85H 0.45_H
kra116s-kra122s.pdf
SEMICONDUCTOR KRA116S~KRA122STECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORSWITCHING APPLICATION.INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONEL B LFEATURESDIM MILLIMETERS_+2.93 0.20With Built-in Bias Resistors. AB 1.30+0.20/-0.15Simplify Circuit Design.C 1.30 MAX23 D 0.45+0.15/-0.05Reduce a Quantity of Parts and Manufacturing Process.E 2.40+0.30/-0.201
kra116m-kra122m.pdf
SEMICONDUCTOR KRA116M~KRA122MTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORSWITCHING APPLICATION.INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONBFEATURESWith Built-in Bias Resistors.DIM MILLIMETERSOSimplify Circuit Design.A 3.20 MAXHM B 4.30 MAXReduce a Quantity of Parts and Manufacturing Process.C 0.55 MAX_D 2.40 + 0.15E 1.27F 2.30C_+G 14.00 0.50H
kra110s-kra114s.pdf
SEMICONDUCTOR KRA110S~KRA114SEPITAXIAL PLANAR PNP TRANSISTORTECHNICAL DATASWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. EL B LFEATURESDIM MILLIMETERS_+A 2.93 0.20With Built-in Bias Resistors.B 1.30+0.20/-0.15Simplify Circuit Design. C 1.30 MAX23 D 0.40+0.15/-0.05Reduce a Quantity of Parts and Manufacturing Process.E 2.40+0.30/
kra110m-kra114m.pdf
SEMICONDUCTOR KRA110M~KRA114MEPITAXIAL PLANAR PNP TRANSISTORTECHNICAL DATASWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. BFEATURESWith Built-in Bias Resistors.Simplify Circuit Design.DIM MILLIMETERSOA 3.20 MAXReduce a Quantity of Parts and Manufacturing Process.HM B 4.30 MAXC 0.55 MAX_D 2.40 + 0.15E 1.27F 2.30C_+G 14.
kra119s.pdf
SEMICONDUCTOR KRA119STECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORSWITCHING APPLICATION.INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONEFEATURESL B LWith Built-in Bias Resistors.DIM MILLIMETERS_+A 2.93 0.20Simplify Circuit Design.B 1.30+0.20/-0.15C 1.30 MAXReduce a Quantity of Parts and Manufacturing Process.23 D 0.40+0.15/-0.05E 2.40+0.30/-0.201G
kra110-kra114.pdf
SEMICONDUCTOR KRA110~KRA114EPITAXIAL PLANAR PNP TRANSISTORTECHNICAL DATASWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B CFEATURESWith Built-in Bias Resistors.Simplify Circuit Design.Reduce a Quantity of Parts and Manufacturing Process.N DIM MILLIMETERSA 4.70 MAXEKB 4.80 MAXGC 3.70 MAXDD 0.45E 1.00F 1.27EQUIVALENT CIRCUIT
Другие транзисторы... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , BC327 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
History: 2N4403
History: 2N4403
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050