KRA310V . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: KRA310V
   Código: PK
   Material: Si
   Polaridad de transistor: Pre-Biased-PNP
   Resistencia de Entrada Base R1 = 4.7 kOhm

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 0.1 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 250 MHz
   Ganancia de corriente contínua (hfe): 120
   Paquete / Cubierta: VSM

Búsqueda de reemplazo de transistor bipolar KRA310V

KRA310V Datasheet (PDF)

0.1. Size:48K kec
kra310v-kra314v.pdf

SEMICONDUCTOR KRA310V~KRA314VEPITAXIAL PLANAR PNP TRANSISTORTECHNICAL DATASWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. EFEATURESBWith Built-in Bias Resistors.Simplify Circuit Design.DIM MILLIMETERS2_Reduce a Quantity of Parts and Manufacturing Process. A 1.2 +0.05_B 0.8 +0.05High Packing Density. 13_C 0.5 + 0.05_D 0.3

8.1. Size:368K kec
kra310-kra314.pdf

SEMICONDUCTOR KRA310~KRA314EPITAXIAL PLANAR PNP TRANSISTORTECHNICAL DATASWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. EM B MFEATURESDIM MILLIMETERSWith Built-in Bias Resistors. _+A 2.00 0.20D2_+B 1.25 0.15Simplify Circuit Design._+C 0.90 0.1031Reduce a Quantity of Parts and Manufacturing Process. D 0.3+0.10/-0.05_

8.2. Size:56K kec
kra310e-kra314e.pdf

SEMICONDUCTOR KRA310E~KRA314EEPITAXIAL PLANAR PNP TRANSISTORTECHNICAL DATASWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. EFEATURESBDIM MILLIMETERSWith Built-in Bias Resistors._+A 1.60 0.10DSimplify Circuit Design. _+2 B 0.85 0.10_+C 0.70 0.10Reduce a Quantity of Parts and Manufacturing Process.31D 0.27+0.10/-0.05_High P

8.3. Size:389K kec
kra310e-kra314e 1.pdf