KRA321E
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: KRA321E
Código: P8
Material: Si
Polaridad de transistor: Pre-Biased-PNP
Resistencia de Entrada Base R1 = 47 kOhm
Resistencia Base-Emisor R2 = 10 kOhm
Ratio típica de resistencia R1/R2 = 4.7
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.1
W
Tensión colector-emisor (Vce): 50
V
Corriente del colector DC máxima (Ic): 0.1
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 250
MHz
Ganancia de corriente contínua (hfe): 33
Paquete / Cubierta:
ESM
Búsqueda de reemplazo de transistor bipolar KRA321E
KRA321E
Datasheet (PDF)
9.1. Size:68K kec
kra316v-kra322v.pdf 
SEMICONDUCTOR KRA316V~KRA322VEPITAXIAL PLANAR PNP TRANSISTORTECHNICAL DATASWITCHING APPLICATION.INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONEFEATURESBWith Built-in Bias Resistors.Simplify Circuit Design.DIM MILLIMETERS2_Reduce a Quantity of Parts and Manufacturing Process. A 1.2 +0.05_B 0.8 +0.0513_C 0.5 + 0.05_D 0.3 + 0.05_E 1.2 + 0.05_G 0.
9.2. Size:68K kec
kra316e-kra322e.pdf
SEMICONDUCTOR KRA316E~KRA322EEPITAXIAL PLANAR PNP TRANSISTORTECHNICAL DATASWITCHING APPLICATION.INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONEFEATURESBDIM MILLIMETERSWith Built-in Bias Resistors._+A 1.60 0.10DSimplify Circuit Design. _+2 B 0.85 0.10_+C 0.70 0.10Reduce a Quantity of Parts and Manufacturing Process.31D 0.27+0.10/-0.05_+
9.3. Size:391K kec
kra316-kra322.pdf
SEMICONDUCTOR KRA316~KRA322EPITAXIAL PLANAR PNP TRANSISTORTECHNICAL DATASWITCHING APPLICATION.INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONEFEATURESM B MWith Built-in Bias Resistors.DIM MILLIMETERS_+A 2.00 0.20Simplify Circuit Design. D2_+B 1.25 0.15Reduce a Quantity of Parts and Manufacturing Process. _+C 0.90 0.1031D 0.3+0.10/-0.05_+
9.4. Size:425K kec
kra316v-kra322v 1.pdf
SEMICONDUCTOR KRA316V~KRA322VEPITAXIAL PLANAR PNP TRANSISTORTECHNICAL DATASWITCHING APPLICATION.INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONEFEATURESBWith Built-in Bias Resistors.Simplify Circuit Design.DIM MILLIMETERS2_Reduce a Quantity of Parts and Manufacturing Process. A 1.2 +0.05_B 0.8 +0.0513_C 0.5 + 0.05_D 0.3 + 0.05_E 1.2 + 0.05_
9.5. Size:425K kec
kra316e-kra322e 1.pdf
SEMICONDUCTOR KRA316E~KRA322EEPITAXIAL PLANAR PNP TRANSISTORTECHNICAL DATASWITCHING APPLICATION.INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONEFEATURESBDIM MILLIMETERSWith Built-in Bias Resistors._+A 1.60 0.10DSimplify Circuit Design. _+2 B 0.85 0.10_+C 0.70 0.10Reduce a Quantity of Parts and Manufacturing Process.31D 0.27+0.10/-0.05_+
Otros transistores... 2SA1803O
, 2SA1803R
, 2SA1804
, 2SA1804O
, 2SA1804R
, 2SA1805
, 2SA1805O
, 2SA1805R
, TIP42
, 2SA181
, 2SA1810
, 2SA1810B
, 2SA1810C
, 2SA1811
, 2SA1815
, 2SA1815-3
, 2SA1815-4
.
