2N5996 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2N5996

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 36 W

Tensión colector-base (Vcb): 36 V

Tensión colector-emisor (Vce): 18 V

Tensión emisor-base (Veb): 3 V

Corriente del colector DC máxima (Ic): 5 A

Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 175 MHz

Capacitancia de salida (Cc): 100 pF

Encapsulados: TO128

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2N5996 datasheet

 9.1. Size:769K  motorola
2n5986-89 2n5991.pdf pdf_icon

2N5996

 9.2. Size:117K  jmnic
2n5989 2n5990 2n5991.pdf pdf_icon

2N5996

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5989 2N5990 2N5991 DESCRIPTION With TO-3PN package Complement to type 2N5986 2N5987 2N5988 Low collector-emitter saturation voltage APPLICATIONS Designed for use in general purpose power amplifier and switching circuits. PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3

 9.4. Size:122K  inchange semiconductor
2n5989 2n5990 2n5991.pdf pdf_icon

2N5996

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5989 2N5990 2N5991 DESCRIPTION With TO-3PN package Complement to type 2N5986/5987/5988 Low collector saturation voltage APPLICATIONS Designed for use in general purpose power amplifier and switching circuits. PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.

Otros transistores... 2N5989, 2N599, 2N5990, 2N5991, 2N5992, 2N5993, 2N5994, 2N5995, S9018, 2N5998, 2N5999, 2N59A, 2N59B, 2N59C, 2N60, 2N600, 2N6000