KRA556U . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: KRA556U
Código: PF
Material: Si
Polaridad de transistor: Pre-Biased-PNP
Resistencia de Entrada Base R1 = 4.7 kOhm
Resistencia Base-Emisor R2 = 47 kOhm
Ratio típica de resistencia R1/R2 = 0.1
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.2 W
Tensión colector-emisor (Vce): 50 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 200 MHz
Ganancia de corriente contínua (hfe): 80
Paquete / Cubierta: USV
Búsqueda de reemplazo de transistor bipolar KRA556U
KRA556U Datasheet (PDF)
kra551u-kra556u.pdf
SEMICONDUCTOR KRA551U~KRA556UTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. BFEATURES B1With Built-in Bias Resistors.1 5DIM MILLIMETERS_Simplify Circuit Design. A 2.00 + 0.202 _A1 1.3 + 0.1Reduce a Quantity of Parts and Manufacturing Process._B 2.1 + 0.13 4 D_B1 1.25 + 0.1High P
kra551e-kra556e.pdf
SEMICONDUCTOR KRA551E~KRA556ETECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. BB1FEATURES With Built-in Bias Resistors.Simplify Circuit Design.1 5 DIM MILLIMETERS_A 1.6 0.05+Reduce a Quantity of Parts and Manufacturing Process._+A1 1.0 0.052_+B 1.6 0.05High Packing Density._
kra557u-kra559u.pdf
SEMICONDUCTOR KRA557U~KRA559UTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. BFEATURES B1With Built-in Bias Resistors1 5DIM MILLIMETERS_Simplify Circuit Design A 2.00 + 0.202 _A1 1.3 + 0.1Reduce a Quantity of Parts and Manufacturing Process_B 2.1 + 0.13 4 D_B1 1.25 + 0.1High Pack
kra557e-kra559e.pdf
SEMICONDUCTOR KRA557E~KRA559ETECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. BB1FEATURES With Built-in Bias ResistorsSimplify Circuit Design1 5 DIM MILLIMETERS_A 1.6 0.05+Reduce a Quantity of Parts and Manufacturing Process_+A1 1.0 0.052_+B 1.6 0.05High Packing Density._+B1 1.2
kra551f-kra554f.pdf
SEMICONDUCTOR KRA551F~KRA554FTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. BB1FEATURES With Built-in Bias Resistors.Simplify Circuit Design.DIM MILLIMETERSReduce a Quantity of Parts and Manufacturing Process._+A 1.0 0.05_+A1 0.7 0.05Thin Fine Pitch Super mini 5 pin Package._+B 1.0 0.
kra557f-kra559f.pdf
SEMICONDUCTOR KRA557F~KRA559FTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. BB1FEATURES With Built-in Bias Resistors.Simplify Circuit Design.DIM MILLIMETERSReduce a Quantity of Parts and Manufacturing Process._+A 1.0 0.05_+A1 0.7 0.05Thin Fine Pitch Super mini 5 pin Package._+
Otros transistores... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
Liste
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