KRA728E
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: KRA728E
Código: JI
Material: Si
Polaridad de transistor: Pre-Biased-PNP
Resistencia de Entrada Base R1 = 22 kOhm
Resistencia Base-Emisor R2 = 47 kOhm
Ratio típica de resistencia R1/R2 = 0.47
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.2
W
Tensión colector-emisor (Vce): 50
V
Corriente del colector DC máxima (Ic): 0.1
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 200
MHz
Ganancia de corriente contínua (hfe): 80
Paquete / Cubierta: TES6
Búsqueda de reemplazo de transistor bipolar KRA728E
KRA728E
Datasheet (PDF)
9.1. Size:47K kec
kra727e-kra729e.pdf 
SEMICONDUCTOR KRA727E~KRA729ETECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. BB1FEATURES With Built-in Bias Resistors1 6 DIM MILLIMETERSSimplify Circuit Design _A 1.6 + 0.05_A1 1.0 + 0.05Reduce a Quantity of Parts and Manufacturing Process 52_B 1.6 + 0.05_B1 1.2 + 0.05High Packing Density.
9.2. Size:383K kec
kra727f-kra729f.pdf
SEMICONDUCTOR KRA727F~KRA729FTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. BB1FEATURES With Built-in Bias Resistors.1 6Simplify Circuit Design. DIM MILLIMETERS_2 5+A 1.0 0.05Reduce a Quantity of Parts and Manufacturing Process._+A1 0.7 0.05_+B 1.0 0.05High Packing Density.
9.3. Size:48K kec
kra727u-kra729u.pdf
SEMICONDUCTOR KRA727U~KRA729UTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. BFEATURES B1With Built-in Bias ResistorsDIM MILLIMETERS1 6_Simplify Circuit Design A 2.00 + 0.20_2 5 A1 1.3 + 0.1Reduce a Quantity of Parts and Manufacturing Process_B 2.1 + 0.13 4 D _B1 1.25 + 0.1High Packing D
9.4. Size:67K kec
kra721u-kra726u.pdf
SEMICONDUCTOR KRA721U~KRA726UTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. BFEATURES B1With Built-in Bias Resistors.DIM MILLIMETERS1 6_Simplify Circuit Design. A 2.00 + 0.20_2 5 A1 1.3 + 0.1Reduce a Quantity of Parts and Manufacturing Process._B 2.1 + 0.13 4 D _B1 1.25 + 0.1High Packin
9.5. Size:68K kec
kra721t-kra726t.pdf
SEMICONDUCTOR KRA721T~KRA726TTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORHIGH CURRENT SWITCHING APPLICATION.INTERFACE CIRCUIT AND DRIVER CIRCUIT APPPLICATION.EK B KFEATURESDIM MILLIMETERS_With Built-in Bias Resistors. A 2.9 + 0.216B 1.6+0.2/-0.1Simplify Circuit Design._C 0.70 0.05+2 5_+D 0.4 0.1Reduce a Quantity of Parts and Manufacturing Process.E 2.
9.6. Size:466K kec
kra721f-kra724f.pdf
SEMICONDUCTOR KRA721F~KRA724FTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. BB1FEATURES With Built-in Bias Resistors.1 6Simplify Circuit Design. DIM MILLIMETERS_2 5+A 1.0 0.05Reduce a Quantity of Parts and Manufacturing Process._+A1 0.7 0.05_+B 1.0 0.05High Packing Density.3_+
9.7. Size:111K kec
kra721e-kra726e.pdf
SEMICONDUCTOR KRA721E~KRA726ETECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. BB1FEATURES With Built-in Bias Resistors.1 6 DIM MILLIMETERS Simplify Circuit Design. _A 1.6 + 0.05_A1 1.0 + 0.05 Reduce a Quantity of Parts and Manufacturing Process. 52_B 1.6 + 0.05_B1 1.2 + 0.05 High Packing D
9.8. Size:423K kec
kra721e-kra726e 1.pdf
SEMICONDUCTOR KRA721E~KRA726ETECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. BB1FEATURES With Built-in Bias Resistors.1 6 DIM MILLIMETERSSimplify Circuit Design. _A 1.6 + 0.05_A1 1.0 + 0.05Reduce a Quantity of Parts and Manufacturing Process. 52_B 1.6 + 0.05_B1 1.2 + 0.05High Packi
Otros transistores... 2SA1771
, 2SA178
, 2SA1790
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, 2SA1800O
, 2SA1800R
, 2SA1800Y
.
