KRA759U . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: KRA759U
Código: PJ
Material: Si
Polaridad de transistor: Pre-Biased-PNP
Resistencia de Entrada Base R1 = 47 kOhm
Resistencia Base-Emisor R2 = 22 kOhm
Ratio típica de resistencia R1/R2 = 2.1
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.2 W
Tensión colector-emisor (Vce): 50 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 200 MHz
Ganancia de corriente contínua (hfe): 70
Paquete / Cubierta: US6
Búsqueda de reemplazo de transistor bipolar KRA759U
KRA759U Datasheet (PDF)
kra757u-kra759u.pdf
SEMICONDUCTOR KRA757U KRA759U TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B FEATURES B1 With Built-in Bias Resistors DIM MILLIMETERS 1 6 _ Simplify Circuit Design A 2.00 + 0.20 _ 2 5 A1 1.3 + 0.1 Reduce a Quantity of Parts and Manufacturing Process _ B 2.1 + 0.1 3 4 D _ B1 1.25 + 0.1 High P
kra757e-kra759e.pdf
SEMICONDUCTOR KRA757E KRA759E TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES With Built-in Bias Resistors 1 6 DIM MILLIMETERS Simplify Circuit Design _ A 1.6 + 0.05 _ A1 1.0 + 0.05 Reduce a Quantity of Parts and Manufacturing Process 5 2 _ B 1.6 + 0.05 _ B1 1.2 + 0.05 High Packing
kra757e-kra759e 1.pdf
SEMICONDUCTOR KRA757E KRA759E TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES With Built-in Bias Resistors 1 6 DIM MILLIMETERS Simplify Circuit Design _ A 1.6 + 0.05 _ A1 1.0 + 0.05 Reduce a Quantity of Parts and Manufacturing Process 5 2 _ B 1.6 + 0.05 _ B1 1.2 + 0.05 High Packing Density.
kra757f-kra759f.pdf
SEMICONDUCTOR KRA757F KRA759F TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES With Built-in Bias Resistors. 1 6 Simplify Circuit Design. DIM MILLIMETERS _ 2 5 + A 1.0 0.05 Reduce a Quantity of Parts and Manufacturing Process. _ + A1 0.7 0.05 _ + B 1.0 0.05 Thin Fine Pitch Super
Otros transistores... KRA757E , KRA757F , KRA757U , KRA758E , KRA758F , KRA758U , KRA759E , KRA759F , TIP35C , KRA760E , KRA760F , KRA760U , KRA761E , KRA761F , KRA761U , KRA762E , KRA762U .
History: KT664A9 | U2TA408
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