KRC117M Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: KRC117M 📄📄
Material: Si
Polaridad de transistor: Pre-Biased-NPN
Resistencia de Entrada Base R1 = 2.2 kOhm
Resistencia Base-Emisor R2 = 2.2 kOhm
Ratio típica de resistencia R1/R2 = 1
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.4 W
Tensión colector-emisor (Vce): 50 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 250 MHz
Ganancia de corriente contínua (hFE): 20
Encapsulados: TO-92M
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KRC117M datasheet
krc110-krc114.pdf
SEMICONDUCTOR KRC110 KRC114 EPITAXIAL PLANAR NPN TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B C FEATURES With Built-in Bias Resistors. Simplify Circuit Design. Reduce a Quantity of Parts and Manufacturing Process. N DIM MILLIMETERS A 4.70 MAX E K B 4.80 MAX G C 3.70 MAX D D 0.45 E 1.00 F 1.27 EQUIVALENT CIRCUIT
krc116-krc122.pdf
SEMICONDUCTOR KRC116 KRC122 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION B C FEATURES With Built-in Bias Resistors. Simplify Circuit Design. Reduce a Quantity of Parts and Manufacturing Process. N DIM MILLIMETERS A 4.70 MAX E K B 4.80 MAX G C 3.70 MAX D D 0.45 E 1.00 F 1.27 G 0.85 H 0.45 _ H
krc110m-krc114m.pdf
SEMICONDUCTOR KRC110M KRC114M EPITAXIAL PLANAR NPN TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B FEATURES With Built-in Bias Resistors. Simplify Circuit Design. DIM MILLIMETERS O A 3.20 MAX Reduce a Quantity of Parts and Manufacturing Process. H M B 4.30 MAX C 0.55 MAX _ D 2.40 + 0.15 E 1.27 F 2.30 C _ + G 14.
krc119s.pdf
SEMICONDUCTOR KRC119S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION FEATURES E With Built-in Bias Resistors. L B L DIM MILLIMETERS Simplify Circuit Design. _ + A 2.93 0.20 B 1.30+0.20/-0.15 Reduce a Quantity of Parts and Manufacturing Process. C 1.30 MAX 2 3 D 0.40+0.15/-0.05 E 2.40+0.30/-0.20 1 G
Otros transistores... KRC108S, KRC109S, KRC110S, KRC111S, KRC112S, KRC113S, KRC114S, KRC116S, MJE350, KRC117S, KRC118M, KRC118S, KRC120M, KRC120S, KRC121M, KRC121S, KRC122M
Parámetros del transistor bipolar y su interrelación.
History: 2SD2182 | DMG21401 | BFW92A
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