KRC411V . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: KRC411V
Código: NM
Material: Si
Polaridad de transistor: Pre-Biased-NPN
Resistencia de Entrada Base R1 = 10 kOhm
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.1 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 250 MHz
Ganancia de corriente contínua (hfe): 120
Paquete / Cubierta: VSM
Búsqueda de reemplazo de transistor bipolar KRC411V
KRC411V Datasheet (PDF)
krc410-krc411-krc414.pdf
SEMICONDUCTOR KRC410, 411, 414EPITAXIAL PLANAR NPN TRANSISTORTECHNICAL DATASWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. EFEATURESM B MDIM MILLIMETERSWith Built-in Bias Resistors._+A 2.00 0.20D2_Simplify Circuit Design. B 1.25 0.15+_+C 0.90 0.103Reduce a Quantity of Parts and Manufacturing Process. 1D 0.3+0.10/-0.05
krc410e-krc414e.pdf
SEMICONDUCTOR KRC410E~KRC414EEPITAXIAL PLANAR NPN TRANSISTORTECHNICAL DATASWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. EFEATURESBDIM MILLIMETERSWith Built-in Bias Resistors._+A 1.60 0.10DSimplify Circuit Design. _+2 B 0.85 0.10_+C 0.70 0.10Reduce a Quantity of Parts and Manufacturing Process.31D 0.27+0.10/-0.05_
krc416v-krc422v.pdf
SEMICONDUCTOR KRC416V~KRC422VEPITAXIAL PLANAR NPN TRANSISTORTECHNICAL DATASWITCHING APPLICATION.INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONEFEATURESBWith Built-in Bias Resistors.Simplify Circuit Design.DIM MILLIMETERS2_Reduce a Quantity of Parts and Manufacturing Process. A 1.2 +0.05_B 0.8 +0.0513_C 0.5 + 0.05_D 0.3 + 0.05_E 1.2 + 0.05_
krc412.pdf
SEMICONDUCTOR KRC412EPITAXIAL PLANAR NPN TRANSISTORTECHNICAL DATASWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. EFEATURESM B MDIM MILLIMETERSWith Built-in Bias Resistors._+A 2.00 0.20D2_Simplify Circuit Design. B 1.25 0.15+_+C 0.90 0.103Reduce a Quantity of Parts and Manufacturing Process. 1D 0.3+0.10/-0.05_+E 2
krc416-krc422.pdf
SEMICONDUCTOR KRC416~KRC422EPITAXIAL PLANAR NPN TRANSISTORTECHNICAL DATASWITCHING APPLICATION.INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONEFEATURESM B MWith Built-in Bias Resistors.DIM MILLIMETERS_+A 2.00 0.20DSimplify Circuit Design.2_+B 1.25 0.15_+C 0.90 0.10Reduce a Quantity of Parts and Manufacturing Process.31D 0.3+0.10/-0.05_
krc410v-krc414v.pdf
SEMICONDUCTOR KRC410V~KRC414VEPITAXIAL PLANAR NPN TRANSISTORTECHNICAL DATASWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. EFEATURESBWith Built-in Bias Resistors.Simplify Circuit Design.DIM MILLIMETERS2_Reduce a Quantity of Parts and Manufacturing Process. A 1.2 +0.05_B 0.8 +0.05High Packing Density. 13_C 0.5 + 0.05_D 0.3
krc413.pdf
SEMICONDUCTOR KRC413EPITAXIAL PLANAR NPN TRANSISTORTECHNICAL DATASWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. EFEATURESM B MDIM MILLIMETERSWith Built-in Bias Resistors._+A 2.00 0.20D2_Simplify Circuit Design. B 1.25 0.15+_+C 0.90 0.103Reduce a Quantity of Parts and Manufacturing Process. 1D 0.3+0.10/-0.05_+E 2
krc416e-krc422e.pdf
SEMICONDUCTOR KRC416E~KRC422EEPITAXIAL PLANAR NPN TRANSISTORTECHNICAL DATASWITCHING APPLICATION.INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONEFEATURESBDIM MILLIMETERSWith Built-in Bias Resistors._+A 1.60 0.10DSimplify Circuit Design. _+2 B 0.85 0.10_+C 0.70 0.10Reduce a Quantity of Parts and Manufacturing Process.31D 0.27+0.10/-0.05_+
Otros transistores... 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050