KRC411V . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

SEMICONDUCTOR KRC410, 411, 414EPITAXIAL PLANAR NPN TRANSISTORTECHNICAL DATASWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. EFEATURESM B MDIM MILLIMETERSWith Built-in Bias Resistors._+A 2.00 0.20D2_Simplify Circuit Design. B 1.25 0.15+_+C 0.90 0.103Reduce a Quantity of Parts and Manufacturing Process. 1D 0.3+0.10/-0.05

SEMICONDUCTOR KRC410E~KRC414EEPITAXIAL PLANAR NPN TRANSISTORTECHNICAL DATASWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. EFEATURESBDIM MILLIMETERSWith Built-in Bias Resistors._+A 1.60 0.10DSimplify Circuit Design. _+2 B 0.85 0.10_+C 0.70 0.10Reduce a Quantity of Parts and Manufacturing Process.31D 0.27+0.10/-0.05_

SEMICONDUCTOR KRC416V~KRC422VEPITAXIAL PLANAR NPN TRANSISTORTECHNICAL DATASWITCHING APPLICATION.INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONEFEATURESBWith Built-in Bias Resistors.Simplify Circuit Design.DIM MILLIMETERS2_Reduce a Quantity of Parts and Manufacturing Process. A 1.2 +0.05_B 0.8 +0.0513_C 0.5 + 0.05_D 0.3 + 0.05_E 1.2 + 0.05_

SEMICONDUCTOR KRC412EPITAXIAL PLANAR NPN TRANSISTORTECHNICAL DATASWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. EFEATURESM B MDIM MILLIMETERSWith Built-in Bias Resistors._+A 2.00 0.20D2_Simplify Circuit Design. B 1.25 0.15+_+C 0.90 0.103Reduce a Quantity of Parts and Manufacturing Process. 1D 0.3+0.10/-0.05_+E 2

SEMICONDUCTOR KRC416~KRC422EPITAXIAL PLANAR NPN TRANSISTORTECHNICAL DATASWITCHING APPLICATION.INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONEFEATURESM B MWith Built-in Bias Resistors.DIM MILLIMETERS_+A 2.00 0.20DSimplify Circuit Design.2_+B 1.25 0.15_+C 0.90 0.10Reduce a Quantity of Parts and Manufacturing Process.31D 0.3+0.10/-0.05_

SEMICONDUCTOR KRC410V~KRC414VEPITAXIAL PLANAR NPN TRANSISTORTECHNICAL DATASWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. EFEATURESBWith Built-in Bias Resistors.Simplify Circuit Design.DIM MILLIMETERS2_Reduce a Quantity of Parts and Manufacturing Process. A 1.2 +0.05_B 0.8 +0.05High Packing Density. 13_C 0.5 + 0.05_D 0.3

SEMICONDUCTOR KRC413EPITAXIAL PLANAR NPN TRANSISTORTECHNICAL DATASWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. EFEATURESM B MDIM MILLIMETERSWith Built-in Bias Resistors._+A 2.00 0.20D2_Simplify Circuit Design. B 1.25 0.15+_+C 0.90 0.103Reduce a Quantity of Parts and Manufacturing Process. 1D 0.3+0.10/-0.05_+E 2

SEMICONDUCTOR KRC416E~KRC422EEPITAXIAL PLANAR NPN TRANSISTORTECHNICAL DATASWITCHING APPLICATION.INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONEFEATURESBDIM MILLIMETERSWith Built-in Bias Resistors._+A 1.60 0.10DSimplify Circuit Design. _+2 B 0.85 0.10_+C 0.70 0.10Reduce a Quantity of Parts and Manufacturing Process.31D 0.27+0.10/-0.05_+