KRC412V Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: KRC412V  📄📄 

Código: NN

Material: Si

Polaridad de transistor: Pre-Biased-NPN

Resistencia de Entrada Base R1 = 100 kOhm

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.1 W

Tensión colector-base (Vcb): 50 V

Tensión colector-emisor (Vce): 50 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 250 MHz

Ganancia de corriente contínua (hFE): 120

Encapsulados: VSM

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KRC412V datasheet

 8.1. Size:392K  kec
krc412.pdf pdf_icon

KRC412V

SEMICONDUCTOR KRC412 EPITAXIAL PLANAR NPN TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. E FEATURES M B M DIM MILLIMETERS With Built-in Bias Resistors. _ + A 2.00 0.20 D 2 _ Simplify Circuit Design. B 1.25 0.15 + _ + C 0.90 0.10 3 Reduce a Quantity of Parts and Manufacturing Process. 1 D 0.3+0.10/-0.05 _ + E 2

 9.1. Size:380K  kec
krc410e-krc414e.pdf pdf_icon

KRC412V

SEMICONDUCTOR KRC410E KRC414E EPITAXIAL PLANAR NPN TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. E FEATURES B DIM MILLIMETERS With Built-in Bias Resistors. _ + A 1.60 0.10 D Simplify Circuit Design. _ + 2 B 0.85 0.10 _ + C 0.70 0.10 Reduce a Quantity of Parts and Manufacturing Process. 3 1 D 0.27+0.10/-0.05 _

 9.2. Size:68K  kec
krc416v-krc422v.pdf pdf_icon

KRC412V

SEMICONDUCTOR KRC416V KRC422V EPITAXIAL PLANAR NPN TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION E FEATURES B With Built-in Bias Resistors. Simplify Circuit Design. DIM MILLIMETERS 2 _ Reduce a Quantity of Parts and Manufacturing Process. A 1.2 +0.05 _ B 0.8 +0.05 1 3 _ C 0.5 + 0.05 _ D 0.3 + 0.05 _ E 1.2 + 0.05 _

 9.3. Size:390K  kec
krc416-krc422.pdf pdf_icon

KRC412V

SEMICONDUCTOR KRC416 KRC422 EPITAXIAL PLANAR NPN TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION E FEATURES M B M With Built-in Bias Resistors. DIM MILLIMETERS _ + A 2.00 0.20 D Simplify Circuit Design. 2 _ + B 1.25 0.15 _ + C 0.90 0.10 Reduce a Quantity of Parts and Manufacturing Process. 3 1 D 0.3+0.10/-0.05 _

Otros transistores... KRC410, KRC410E, KRC410V, KRC411, KRC411E, KRC411V, KRC412, KRC412E, BC327, KRC413, KRC413E, KRC413V, KRC414, KRC414E, KRC414V, KRC416, KRC416E