KRC417V . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

SEMICONDUCTOR KRC410E KRC414E EPITAXIAL PLANAR NPN TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. E FEATURES B DIM MILLIMETERS With Built-in Bias Resistors. _ + A 1.60 0.10 D Simplify Circuit Design. _ + 2 B 0.85 0.10 _ + C 0.70 0.10 Reduce a Quantity of Parts and Manufacturing Process. 3 1 D 0.27+0.10/-0.05 _

SEMICONDUCTOR KRC416V KRC422V EPITAXIAL PLANAR NPN TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION E FEATURES B With Built-in Bias Resistors. Simplify Circuit Design. DIM MILLIMETERS 2 _ Reduce a Quantity of Parts and Manufacturing Process. A 1.2 +0.05 _ B 0.8 +0.05 1 3 _ C 0.5 + 0.05 _ D 0.3 + 0.05 _ E 1.2 + 0.05 _

SEMICONDUCTOR KRC412 EPITAXIAL PLANAR NPN TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. E FEATURES M B M DIM MILLIMETERS With Built-in Bias Resistors. _ + A 2.00 0.20 D 2 _ Simplify Circuit Design. B 1.25 0.15 + _ + C 0.90 0.10 3 Reduce a Quantity of Parts and Manufacturing Process. 1 D 0.3+0.10/-0.05 _ + E 2

SEMICONDUCTOR KRC416 KRC422 EPITAXIAL PLANAR NPN TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION E FEATURES M B M With Built-in Bias Resistors. DIM MILLIMETERS _ + A 2.00 0.20 D Simplify Circuit Design. 2 _ + B 1.25 0.15 _ + C 0.90 0.10 Reduce a Quantity of Parts and Manufacturing Process. 3 1 D 0.3+0.10/-0.05 _

SEMICONDUCTOR KRC410, 411, 414 EPITAXIAL PLANAR NPN TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. E FEATURES M B M DIM MILLIMETERS With Built-in Bias Resistors. _ + A 2.00 0.20 D 2 _ Simplify Circuit Design. B 1.25 0.15 + _ + C 0.90 0.10 3 Reduce a Quantity of Parts and Manufacturing Process. 1 D 0.3+0.10/-0.05

SEMICONDUCTOR KRC410V KRC414V EPITAXIAL PLANAR NPN TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. E FEATURES B With Built-in Bias Resistors. Simplify Circuit Design. DIM MILLIMETERS 2 _ Reduce a Quantity of Parts and Manufacturing Process. A 1.2 +0.05 _ B 0.8 +0.05 High Packing Density. 1 3 _ C 0.5 + 0.05 _ D 0.3

SEMICONDUCTOR KRC413 EPITAXIAL PLANAR NPN TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. E FEATURES M B M DIM MILLIMETERS With Built-in Bias Resistors. _ + A 2.00 0.20 D 2 _ Simplify Circuit Design. B 1.25 0.15 + _ + C 0.90 0.10 3 Reduce a Quantity of Parts and Manufacturing Process. 1 D 0.3+0.10/-0.05 _ + E 2

SEMICONDUCTOR KRC416E KRC422E EPITAXIAL PLANAR NPN TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION E FEATURES B DIM MILLIMETERS With Built-in Bias Resistors. _ + A 1.60 0.10 D Simplify Circuit Design. _ + 2 B 0.85 0.10 _ + C 0.70 0.10 Reduce a Quantity of Parts and Manufacturing Process. 3 1 D 0.27+0.10/-0.05 _ +