KRC656U Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: KRC656U  📄📄 

Código: NF

Material: Si

Polaridad de transistor: Pre-Biased-NPN

Resistencia de Entrada Base R1 = 4.7 kOhm

Resistencia Base-Emisor R2 = 47 kOhm

Ratio típica de resistencia R1/R2 = 0.1

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.2 W

Tensión colector-emisor (Vce): 50 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 200 MHz

Ganancia de corriente contínua (hFE): 80

Encapsulados: USV

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KRC656U datasheet

 0.1. Size:427K  kec
 krc651u-krc656u.pdf pdf_icon

KRC656U

SEMICONDUCTOR KRC651U KRC656U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B FEATURES B1 With Built-in Bias Resistors. 1 5 DIM MILLIMETERS _ Simplify Circuit Design. A 2.00 + 0.20 2 _ A1 1.3 + 0.1 Reduce a Quantity of Parts and Manufacturing Process. _ B 2.1 + 0.1 3 4 D _ B1 1.25 + 0.1 High Pa

 8.1. Size:70K  kec
 krc651e-krc656e.pdf pdf_icon

KRC656U

SEMICONDUCTOR KRC651E KRC656E TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES With Built-in Bias Resistors. Simplify Circuit Design. 1 5 DIM MILLIMETERS _ A 1.6 0.05 + Reduce a Quantity of Parts and Manufacturing Process. _ + A1 1.0 0.05 2 _ + B 1.6 0.05 High Packing Density. _

 9.1. Size:49K  kec
 krc657u-krc659u.pdf pdf_icon

KRC656U

SEMICONDUCTOR KRC657U KRC659U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES With Built-in Bias Resistors. 1 5 DIM MILLIMETERS _ A 2.00 + 0.20 Simplify Circuit Design. 2 _ A1 1.3 + 0.1 _ B 2.1 + 0.1 Reduce a Quantity of Parts and Manufacturing Process. 3 4 D _ B1 1.25 + 0.1 C 0.65 D 0.

 9.2. Size:49K  kec
 krc657e-krc659e.pdf pdf_icon

KRC656U

SEMICONDUCTOR KRC657E KRC659E TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES With Built-in Bias Resistors. 1 5 DIM MILLIMETERS Simplify Circuit Design. _ A 1.6 0.05 + Reduce a Quantity of Parts and Manufacturing Process. _ + A1 1.0 0.05 2 _ + B 1.6 0.05 High Packing Density. _

MOSTRAR MÁS

Otros transistores... KRC653F, KRC653U, KRC654E, KRC654F, KRC654U, KRC655E, KRC655U, KRC656E, D882P, KRC657E, KRC657F, KRC657U, KRC658E, KRC658F, KRC658U, KRC659E, KRC659F