KRC657E . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: KRC657E
Código: NH
Material: Si
Polaridad de transistor: Pre-Biased-NPN
Resistencia de Entrada Base R1 = 10 kOhm
Resistencia Base-Emisor R2 = 47 kOhm
Ratio típica de resistencia R1/R2 = 0.21
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.2 W
Tensión colector-emisor (Vce): 50 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 200 MHz
Ganancia de corriente contínua (hfe): 80
Paquete / Cubierta: TESV
Búsqueda de reemplazo de transistor bipolar KRC657E
KRC657E Datasheet (PDF)
krc657e-krc659e.pdf
SEMICONDUCTOR KRC657E~KRC659ETECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. BB1FEATURESWith Built-in Bias Resistors.1 5 DIM MILLIMETERSSimplify Circuit Design._A 1.6 0.05+Reduce a Quantity of Parts and Manufacturing Process. _+A1 1.0 0.052_+B 1.6 0.05High Packing Density._
krc657u-krc659u.pdf
SEMICONDUCTOR KRC657U~KRC659UTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. BB1FEATURESWith Built-in Bias Resistors.1 5DIM MILLIMETERS_A 2.00 + 0.20Simplify Circuit Design.2 _A1 1.3 + 0.1_B 2.1 + 0.1Reduce a Quantity of Parts and Manufacturing Process.3 4 D_B1 1.25 + 0.1C 0.65D 0.
krc657f-krc659f.pdf
SEMICONDUCTOR KRC657F~KRC659FTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. BFEATURES B1With Built-in Bias Resistors.Simplify Circuit Design.Reduce a Quantity of Parts and Manufacturing Process.DIM MILLIMETERSThin Fine Pitch Super mini 5pin Package._+A 1.0 0.05_+A1 0.7 0.05_+B
Otros transistores... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050 | HSA1037AKS