2N6029 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N6029
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 200 W
Tensión colector-base (Vcb): 100 V
Tensión colector-emisor (Vce): 100 V
Tensión emisor-base (Veb): 7 V
Corriente del colector DC máxima (Ic): 20 A
Temperatura operativa máxima (Tj): 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 1 MHz
Capacitancia de salida (Cc): 1000 pF
Ganancia de corriente contínua (hFE): 25
Encapsulados: TO3
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2N6029 datasheet
2n5629 2n5630 2n6029 2n6030.pdf
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2n6029 2n6030.pdf
Product Specification www.jmnic.com Silicon PNP Power Transistors 2N6029 2N6030 DESCRIPTION With TO-3 package Complement to type 2N5629 2N5630 APPLICATIONS For high voltage and high power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITI
2n6029 2n6030.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N6029 2N6030 DESCRIPTION With TO-3 package Complement to type 2N5629 2N5630 High power dissipations APPLICATIONS For high voltage and high power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum rating
2n6027 2n6028.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N6027/D 2N6027 Programmable 2N6028 Unijunction Transistors Silicon Programmable Unijunction Transistors . . . designed to enable the engineer to program unijunction characteristics such as PUTs RBB, , IV, and IP by merely selecting two resistor values. Application includes 40 VOLTS thyristor-trigger, oscillator,
Otros transistores... 2N6016 , 2N6017 , 2N602 , 2N6021 , 2N6022 , 2N6024 , 2N6025 , 2N6026 , TIP3055 , 2N602A , 2N603 , 2N6030 , 2N6031 , 2N6032 , 2N6033 , 2N6034 , 2N6035 .
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