KRC828U Todos los transistores

 

KRC828U . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: KRC828U
   Código: YI
   Material: Si
   Polaridad de transistor: Pre-Biased-NPN
   Resistencia de Entrada Base R1 = 22 kOhm
   Resistencia Base-Emisor R2 = 47 kOhm
   Ratio típica de resistencia R1/R2 = 0.47

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.2 W
   Tensión colector-emisor (Vce): 50 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 200 MHz
   Ganancia de corriente contínua (hfe): 80
   Paquete / Cubierta: US6

 Búsqueda de reemplazo de transistor bipolar KRC828U

 

KRC828U Datasheet (PDF)

 9.1. Size:49K  kec
krc827e-krc829e.pdf pdf_icon

KRC828U

SEMICONDUCTOR KRC827E KRC829E EPITAXIAL PLANAR NPN TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. B INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B1 FEATURES With Built-in Bias Resistors. 1 6 DIM MILLIMETERS _ A 1.6 + 0.05 Simplify Circuit Design. _ A1 1.0 + 0.05 2 5 _ B 1.6 + 0.05 Reduce a Quantity of Parts and Manufacturing Process. _ B1 1.2 + 0.05 High Packing De

 9.2. Size:391K  kec
krc827f-krc829f.pdf pdf_icon

KRC828U

SEMICONDUCTOR KRC827F KRC829F EPITAXIAL PLANAR NPN TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES 1 6 With Built-in Bias Resistors. DIM MILLIMETERS Simplify Circuit Design. _ 2 5 + A 1.0 0.05 _ + A1 0.7 0.05 Reduce a Quantity of Parts and Manufacturing Process. _ + B 1.0 0.05 3 _ + High Packing

 9.3. Size:72K  kec
krc821e-krc826e.pdf pdf_icon

KRC828U

SEMICONDUCTOR KRC821E KRC826E TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES With Built-in Bias Resistors. 1 6 DIM MILLIMETERS Simplify Circuit Design. _ A 1.6 + 0.05 _ A1 1.0 + 0.05 Reduce a Quantity of Parts and Manufacturing Process. 5 2 _ B 1.6 + 0.05 _ B1 1.2 + 0.05 High Packing Densit

 9.4. Size:512K  kec
krc821f-krc824f.pdf pdf_icon

KRC828U

SEMICONDUCTOR KRC821F KRC824F TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES With Built-in Bias Resistors. 1 6 Simplify Circuit Design. DIM MILLIMETERS _ 2 5 + A 1.0 0.05 Reduce a Quantity of Parts and Manufacturing Process. _ + A1 0.7 0.05 _ + B 1.0 0.05 High Packing Density.

Otros transistores... KRC825U , KRC826E , KRC826U , KRC827E , KRC827F , KRC827U , KRC828E , KRC828F , 2SC2625 , KRC829E , KRC829F , KRC829U , KRC830E , KRC830F , KRC830U , KRC831E , KRC831F .

History: U2T355

 

 
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