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KRC854E . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: KRC854E
   Código: ND
   Material: Si
   Polaridad de transistor: Pre-Biased-NPN
   Resistencia de Entrada Base R1 = 47 kOhm
   Resistencia Base-Emisor R2 = 47 kOhm
   Ratio típica de resistencia R1/R2 = 1

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.2 W
   Tensión colector-emisor (Vce): 50 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 200 MHz
   Ganancia de corriente contínua (hfe): 80
   Paquete / Cubierta: TES6
 

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KRC854E Datasheet (PDF)

 8.1. Size:402K  kec
krc851f-krc854f.pdf pdf_icon

KRC854E

SEMICONDUCTOR KRC851F~KRC854FTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. BB1FEATURES With Built-in Bias Resistors.1 6Simplify Circuit Design. DIM MILLIMETERS_2 5+A 1.0 0.05Reduce a Quantity of Parts and Manufacturing Process._+A1 0.7 0.05_+B 1.0 0.05High Packing Density.

 9.1. Size:70K  kec
krc851u-krc856u.pdf pdf_icon

KRC854E

SEMICONDUCTOR KRC851U~KRC856UTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORSWITCHING APPLICATION.INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. BFEATURES B1With Built-in Bias Resistors.DIM MILLIMETERS1 6_Simplify Circuit Design. A 2.00 + 0.20_2 5 A1 1.3 + 0.1Reduce a Quantity of Parts and Manufacturing Process._B 2.1 + 0.13 4 D _B1 1.25 + 0.1High Packing

 9.2. Size:70K  kec
krc851e-krc856e.pdf pdf_icon

KRC854E

SEMICONDUCTOR KRC851E~KRC856ETECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORSWITCHING APPLICATION.INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. BB1FEATURES With Built-in Bias Resistors.1 6 DIM MILLIMETERSSimplify Circuit Design. _A 1.6 + 0.05_A1 1.0 + 0.05Reduce a Quantity of Parts and Manufacturing Process. 52_B 1.6 + 0.05_B1 1.2 + 0.05High Packin

 9.3. Size:49K  kec
krc857e-krc859e.pdf pdf_icon

KRC854E

SEMICONDUCTOR KRC857E~KRC859ETECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORSWITCHING APPLICATION. BINTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B1FEATURESWith Built-in Bias Resistors.1 6 DIM MILLIMETERS_A 1.6 + 0.05Simplify Circuit Design._A1 1.0 + 0.052 5_B 1.6 + 0.05Reduce a Quantity of Parts and Manufacturing Process._B1 1.2 + 0.05High Packing Den

Otros transistores... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , TIP42C , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

History: BC512 | KTD2424 | UNR5213 | BU406A | KTC3572 | PUA3117 | 2SC4758

 

 
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