KRC858U Todos los transistores

 

KRC858U . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: KRC858U
   Código: NI
   Material: Si
   Polaridad de transistor: Pre-Biased-NPN
   Resistencia de Entrada Base R1 = 22 kOhm
   Resistencia Base-Emisor R2 = 47 kOhm
   Ratio típica de resistencia R1/R2 = 0.47

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.2 W
   Tensión colector-emisor (Vce): 50 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 200 MHz
   Ganancia de corriente contínua (hfe): 80
   Paquete / Cubierta: US6

 Búsqueda de reemplazo de transistor bipolar KRC858U

 

KRC858U Datasheet (PDF)

 9.1. Size:70K  kec
krc851u-krc856u.pdf pdf_icon

KRC858U

SEMICONDUCTOR KRC851U KRC856U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B FEATURES B1 With Built-in Bias Resistors. DIM MILLIMETERS 1 6 _ Simplify Circuit Design. A 2.00 + 0.20 _ 2 5 A1 1.3 + 0.1 Reduce a Quantity of Parts and Manufacturing Process. _ B 2.1 + 0.1 3 4 D _ B1 1.25 + 0.1 High Packing

 9.2. Size:402K  kec
krc851f-krc854f.pdf pdf_icon

KRC858U

SEMICONDUCTOR KRC851F KRC854F TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES With Built-in Bias Resistors. 1 6 Simplify Circuit Design. DIM MILLIMETERS _ 2 5 + A 1.0 0.05 Reduce a Quantity of Parts and Manufacturing Process. _ + A1 0.7 0.05 _ + B 1.0 0.05 High Packing Density.

 9.3. Size:70K  kec
krc851e-krc856e.pdf pdf_icon

KRC858U

SEMICONDUCTOR KRC851E KRC856E TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES With Built-in Bias Resistors. 1 6 DIM MILLIMETERS Simplify Circuit Design. _ A 1.6 + 0.05 _ A1 1.0 + 0.05 Reduce a Quantity of Parts and Manufacturing Process. 5 2 _ B 1.6 + 0.05 _ B1 1.2 + 0.05 High Packin

 9.4. Size:49K  kec
krc857e-krc859e.pdf pdf_icon

KRC858U

SEMICONDUCTOR KRC857E KRC859E TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. B INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B1 FEATURES With Built-in Bias Resistors. 1 6 DIM MILLIMETERS _ A 1.6 + 0.05 Simplify Circuit Design. _ A1 1.0 + 0.05 2 5 _ B 1.6 + 0.05 Reduce a Quantity of Parts and Manufacturing Process. _ B1 1.2 + 0.05 High Packing Den

Otros transistores... KRC855U , KRC856E , KRC856U , KRC857E , KRC857F , KRC857U , KRC858E , KRC858F , C5198 , KRC859E , KRC859F , KRC859U , KRC860E , KRC860F , KRC860U , KRC861E , KRC861F .

History: U2TG406 | KT664A9

 

 
Back to Top

 


 
.