KRC868U Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: KRC868U 📄📄
Código: N5
Material: Si
Polaridad de transistor: Pre-Biased-NPN
Resistencia de Entrada Base R1 = 2.2 kOhm
Resistencia Base-Emisor R2 = 10 kOhm
Ratio típica de resistencia R1/R2 = 0.22
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.2 W
Tensión colector-emisor (Vce): 50 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 250 MHz
Ganancia de corriente contínua (hFE): 33
Encapsulados: US6
📄📄 Copiar
Búsqueda de reemplazo de KRC868U
- Selecciónⓘ de transistores por parámetros
KRC868U datasheet
krc866e-krc872e.pdf
SEMICONDUCTOR KRC866E KRC872E EPITAXIAL PLANAR NPN TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION B B1 FEATURES With Built-in Bias Resistors. 1 6 DIM MILLIMETERS Simplify Circuit Design. _ A 1.6 + 0.05 _ A1 1.0 + 0.05 Reduce a Quantity of Parts and Manufacturing Process. 5 2 _ B 1.6 + 0.05 _ B1 1.2 + 0.05 C 0.50 3 4 _ D 0.
krc860f-krc864f.pdf
SEMICONDUCTOR KRC860F KRC864F EPITAXIAL PLANAR PNP TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES With Built-in Bias Resistors. 1 6 Simplify Circuit Design. DIM MILLIMETERS _ 2 5 + A 1.0 0.05 Reduce a Quantity of Parts and Manufacturing Process. _ + A1 0.7 0.05 _ + B 1.0 0.05 High Packing Density.
krc866e-krc872e 1.pdf
SEMICONDUCTOR KRC866E KRC872E EPITAXIAL PLANAR NPN TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION B B1 FEATURES With Built-in Bias Resistors. 1 6 DIM MILLIMETERS Simplify Circuit Design. _ A 1.6 + 0.05 _ A1 1.0 + 0.05 Reduce a Quantity of Parts and Manufacturing Process. 5 2 _ B 1.6 + 0.05 _ B1 1.2 + 0.05 C 0.50 3 4 _
krc860e-krc864e.pdf
SEMICONDUCTOR KRC860E KRC864E EPITAXIAL PLANAR NPN TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES With Built-in Bias Resistors. 1 6 DIM MILLIMETERS Simplify Circuit Design. _ A 1.6 + 0.05 _ A1 1.0 + 0.05 Reduce a Quantity of Parts and Manufacturing Process. 5 2 _ B 1.6 + 0.05 _ B1 1.2 + 0.05 High Packing Densi
Otros transistores... KRC864E, KRC864F, KRC864U, KRC866E, KRC866U, KRC867E, KRC867U, KRC868E, A733, KRC869E, KRC869U, KRC870E, KRC870U, KRC871E, KRC871U, KRC872E, KRC872U
Parámetros del transistor bipolar y su interrelación.
History: MMUN2113LT3G | 2SC3505 | WT4321-25 | RN2709JE | BUT21BF | SUR540J | ESM4011
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: ZDT6705 | GA1L4Z | GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L
Popular searches
c2837 datasheet | 2n414 | c3998 | c4468 datasheet | 2sc2603 | jcs50n20wt | 2sa1360 | p60nf06 datasheet






