KRX101E . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: KRX101E
Material: Si
Polaridad de transistor: Pre-Biased-NPN*PNP
Resistencia de Entrada Base R1 = 10 kOhm
Resistencia Base-Emisor R2 = 10 kOhm
Ratio típica de resistencia R1/R2 = 1
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.2 W
Tensión colector-emisor (Vce): 50 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 200 MHz
Ganancia de corriente contínua (hfe): 50
Paquete / Cubierta: TESV
Búsqueda de reemplazo de transistor bipolar KRX101E
KRX101E Datasheet (PDF)
krx101e.pdf
KRX101ESEMICONDUCTORTECHNICAL DATA EPITAXIAL PLANAR NPN/PNP TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.BB1FEATURESIncluding two devices in TESV.(Thin Extereme Super mini type with 5 pin.)1 5 DIM MILLIMETERS_A 1.6 0.05+With Built-in bias resistors. _+A1 1.0 0.052_+B 1.6 0.05Simplify circuit design. _+B1 1.2
krx101u.pdf
KRX101USEMICONDUCTORTECHNICAL DATA EPITAXIAL PLANAR NPN/PNP TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.BFEATURES B1Including two devices in USV.1 5DIM MILLIMETERS_(Ultra Super mini type with 5 leads.) A 2.00 + 0.202 _A1 1.3 + 0.1With Built-in bias resistors. _B 2.1 + 0.13 4 D_B1 1.25 + 0.1Simplify circuit design. C
krx102u.pdf
KRX102USEMICONDUCTOREPITAXIAL PLANAR NPN/PNP TRANSISTORTECHNICAL DATASWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.BFEATURES B1Including two devices in USV.1 5DIM MILLIMETERS_(Ultra Super mini type with 5 leads.) A 2.00 + 0.202 _A1 1.3 + 0.1With Built-in bias resistors. _B 2.1 + 0.13 4 D_B1 1.25 + 0.1Simplify circuit desi
krx102f.pdf
KRX102FSEMICONDUCTOREPITAXIAL PLANAR NPN/PNP TRANSISTORTECHNICAL DATASWITCHING APPLICATION. BINTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.B1FEATURES1 5Including two devices in TFSV.DIM MILLIMETERS(Thin Fine Pitch Super mini 5pin Package.)2 _+A 1.0 0.05_+A1 0.7 0.05With Built-in bias resistors. _+B 1.0 0.053_Simplify circuit design. 4+B1
krx103u.pdf
KRX103USEMICONDUCTORTECHNICAL DATA EPITAXIAL PLANAR NPN/PNP TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.BFEATURES B1Including two devices in USV.1 5DIM MILLIMETERS_(Ultra Super mini type with 5 leads.) A 2.00 + 0.202 _A1 1.3 + 0.1With Built-in bias resistors. _B 2.1 + 0.13 4 D_B1 1.25 + 0.1Simplify circuit desig
krx105u.pdf
KRX105USEMICONDUCTORTECHNICAL DATA EPITAXIAL PLANAR NPN/PNP TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.BFEATURES B1Including two devices in USV.1 5DIM MILLIMETERS_(Ultra Super mini type with 5 leads.) A 2.00 + 0.202 _A1 1.3 + 0.1With Built-in bias resistors. _B 2.1 + 0.13 4 D_B1 1.25 + 0.1Simplify circuit desig
krx104u.pdf
KRX104USEMICONDUCTORTECHNICAL DATA EPITAXIAL PLANAR NPN/PNP TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.BFEATURES B1Including two devices in USV.1 5DIM MILLIMETERS_(Ultra Super mini type with 5 leads.) A 2.00 + 0.202 _A1 1.3 + 0.1With Built-in bias resistors. _B 2.1 + 0.13 4 D_B1 1.25 + 0.1Simplify circuit desig
krx102e.pdf
KRX102ESEMICONDUCTOREPITAXIAL PLANAR NPN/PNP TRANSISTORTECHNICAL DATASWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.BB1FEATURESIncluding two devices in TESV.(Thin Extreme Super mini type with 5 pin.)1 5 DIM MILLIMETERS_A 1.6 0.05+With Built-in bias resistors. _+A1 1.0 0.052_+B 1.6 0.05Simplify circuit design. _+B1 1.2
krx105e.pdf
KRX105ESEMICONDUCTOREPITAXIAL PLANAR NPN/PNP TRANSISTORTECHNICAL DATASWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.BB1FEATURESIncluding two devices in TESV.(Thin Extreme Super mini type with 5 pin.)1 5 DIM MILLIMETERS_A 1.6 0.05+With Built-in bias resistors. _+A1 1.0 0.052_+B 1.6 0.05Simplify circuit design. _+B
krx103e.pdf
KRX103ESEMICONDUCTOREPITAXIAL PLANAR NPN/PNP TRANSISTORTECHNICAL DATASWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.BB1FEATURESIncluding two devices in TESV.(Thin Extreme Super mini type with 5 pin.)1 5 DIM MILLIMETERS_A 1.6 0.05+With Built-in bias resistors. _+A1 1.0 0.052_+B 1.6 0.05Simplify circuit design. _+B1 1.2
krx104e.pdf
KRX104ESEMICONDUCTOREPITAXIAL PLANAR NPN/PNP TRANSISTORTECHNICAL DATASWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.BB1FEATURESIncluding two devices in TESV.(Thin Extreme Super mini type with 5 pin.)1 5 DIM MILLIMETERS_A 1.6 0.05+With Built-in bias resistors. _+A1 1.0 0.052_+B 1.6 0.05Simplify circuit design. _+B1 1.2
Otros transistores... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
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