KRX103E . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: KRX103E
Material: Si
Polaridad de transistor: Pre-Biased-NPN*PNP
Resistencia de Entrada Base R1 = 22 kOhm
Resistencia Base-Emisor R2 = 22 kOhm
Ratio típica de resistencia R1/R2 = 1
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.2 W
Tensión colector-emisor (Vce): 50 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 200 MHz
Ganancia de corriente contínua (hfe): 70
Paquete / Cubierta: TESV
Búsqueda de reemplazo de transistor bipolar KRX103E
KRX103E Datasheet (PDF)
krx103e.pdf
KRX103ESEMICONDUCTOREPITAXIAL PLANAR NPN/PNP TRANSISTORTECHNICAL DATASWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.BB1FEATURESIncluding two devices in TESV.(Thin Extreme Super mini type with 5 pin.)1 5 DIM MILLIMETERS_A 1.6 0.05+With Built-in bias resistors. _+A1 1.0 0.052_+B 1.6 0.05Simplify circuit design. _+B1 1.2
krx103u.pdf
KRX103USEMICONDUCTORTECHNICAL DATA EPITAXIAL PLANAR NPN/PNP TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.BFEATURES B1Including two devices in USV.1 5DIM MILLIMETERS_(Ultra Super mini type with 5 leads.) A 2.00 + 0.202 _A1 1.3 + 0.1With Built-in bias resistors. _B 2.1 + 0.13 4 D_B1 1.25 + 0.1Simplify circuit desig
krx102u.pdf
KRX102USEMICONDUCTOREPITAXIAL PLANAR NPN/PNP TRANSISTORTECHNICAL DATASWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.BFEATURES B1Including two devices in USV.1 5DIM MILLIMETERS_(Ultra Super mini type with 5 leads.) A 2.00 + 0.202 _A1 1.3 + 0.1With Built-in bias resistors. _B 2.1 + 0.13 4 D_B1 1.25 + 0.1Simplify circuit desi
krx102f.pdf
KRX102FSEMICONDUCTOREPITAXIAL PLANAR NPN/PNP TRANSISTORTECHNICAL DATASWITCHING APPLICATION. BINTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.B1FEATURES1 5Including two devices in TFSV.DIM MILLIMETERS(Thin Fine Pitch Super mini 5pin Package.)2 _+A 1.0 0.05_+A1 0.7 0.05With Built-in bias resistors. _+B 1.0 0.053_Simplify circuit design. 4+B1
krx101u.pdf
KRX101USEMICONDUCTORTECHNICAL DATA EPITAXIAL PLANAR NPN/PNP TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.BFEATURES B1Including two devices in USV.1 5DIM MILLIMETERS_(Ultra Super mini type with 5 leads.) A 2.00 + 0.202 _A1 1.3 + 0.1With Built-in bias resistors. _B 2.1 + 0.13 4 D_B1 1.25 + 0.1Simplify circuit design. C
krx105u.pdf
KRX105USEMICONDUCTORTECHNICAL DATA EPITAXIAL PLANAR NPN/PNP TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.BFEATURES B1Including two devices in USV.1 5DIM MILLIMETERS_(Ultra Super mini type with 5 leads.) A 2.00 + 0.202 _A1 1.3 + 0.1With Built-in bias resistors. _B 2.1 + 0.13 4 D_B1 1.25 + 0.1Simplify circuit desig
krx104u.pdf
KRX104USEMICONDUCTORTECHNICAL DATA EPITAXIAL PLANAR NPN/PNP TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.BFEATURES B1Including two devices in USV.1 5DIM MILLIMETERS_(Ultra Super mini type with 5 leads.) A 2.00 + 0.202 _A1 1.3 + 0.1With Built-in bias resistors. _B 2.1 + 0.13 4 D_B1 1.25 + 0.1Simplify circuit desig
krx101e.pdf
KRX101ESEMICONDUCTORTECHNICAL DATA EPITAXIAL PLANAR NPN/PNP TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.BB1FEATURESIncluding two devices in TESV.(Thin Extereme Super mini type with 5 pin.)1 5 DIM MILLIMETERS_A 1.6 0.05+With Built-in bias resistors. _+A1 1.0 0.052_+B 1.6 0.05Simplify circuit design. _+B1 1.2
krx102e.pdf
KRX102ESEMICONDUCTOREPITAXIAL PLANAR NPN/PNP TRANSISTORTECHNICAL DATASWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.BB1FEATURESIncluding two devices in TESV.(Thin Extreme Super mini type with 5 pin.)1 5 DIM MILLIMETERS_A 1.6 0.05+With Built-in bias resistors. _+A1 1.0 0.052_+B 1.6 0.05Simplify circuit design. _+B1 1.2
krx105e.pdf
KRX105ESEMICONDUCTOREPITAXIAL PLANAR NPN/PNP TRANSISTORTECHNICAL DATASWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.BB1FEATURESIncluding two devices in TESV.(Thin Extreme Super mini type with 5 pin.)1 5 DIM MILLIMETERS_A 1.6 0.05+With Built-in bias resistors. _+A1 1.0 0.052_+B 1.6 0.05Simplify circuit design. _+B
krx104e.pdf
KRX104ESEMICONDUCTOREPITAXIAL PLANAR NPN/PNP TRANSISTORTECHNICAL DATASWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.BB1FEATURESIncluding two devices in TESV.(Thin Extreme Super mini type with 5 pin.)1 5 DIM MILLIMETERS_A 1.6 0.05+With Built-in bias resistors. _+A1 1.0 0.052_+B 1.6 0.05Simplify circuit design. _+B1 1.2
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
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