KRX205E
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: KRX205E
Material: Si
Polaridad de transistor: Pre-Biased-NPN*PNP
Resistencia de Entrada Base R1 = 4.7 kOhm
Resistencia Base-Emisor R2 = 4.7 kOhm
Ratio típica de resistencia R1/R2 = 1
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.2
W
Tensión colector-base (Vcb): 50
V
Tensión colector-emisor (Vce): 50
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 0.1
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 250
MHz
Ganancia de corriente contínua (hfe): 120
Paquete / Cubierta: TES6
Búsqueda de reemplazo de transistor bipolar KRX205E
KRX205E
Datasheet (PDF)
..1. Size:377K kec
krx205e.pdf 
KRX205ESEMICONDUCTORTECHNICAL DATA EPITAXIAL PLANAR NPN/PNP TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. BB1FEATURESIncluding two devices in TES6.1 6 DIM MILLIMETERS(Thin Extreme Super mini type with 6 pin.) _A 1.6 + 0.05_A1 1.0 + 0.05With Built-in bias resistors. 52_B 1.6 + 0.05_B1 1.2 + 0.05Simplify circuit desi
8.1. Size:379K kec
krx205u.pdf
KRX205USEMICONDUCTORTECHNICAL DATA EPITAXIAL PLANAR NPN/PNP TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.BFEATURESB1Including two devices in US6.DIM MILLIMETERS1 6_(Ultra Super mini type with 6 leads.) A 2.00 + 0.20_2 5 A1 1.3 + 0.1With Built-in bias resistors. _B 2.1 + 0.13 4 D _B1 1.25 + 0.1Simplify circuit des
9.1. Size:382K kec
krx207u.pdf
KRX207USEMICONDUCTOREPITAXIAL PLANAR NPN/PNP TRANSISTORTECHNICAL DATASWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.BFEATURESB1Including two devices in US6.DIM MILLIMETERS1 6_(Ultra Super mini type with 6 leads.) A 2.00 + 0.20_2 5 A1 1.3 + 0.1With Built-in bias resistors. _B 2.1 + 0.13 4 D _B1 1.25 + 0.1Simplify circuit de
9.2. Size:382K kec
krx208u.pdf
KRX208USEMICONDUCTOREPITAXIAL PLANAR NPN/PNP TRANSISTORTECHNICAL DATASWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.BFEATURESB1Including two devices in US6.DIM MILLIMETERS1 6_(Ultra Super mini type with 6 leads.) A 2.00 + 0.20_2 5 A1 1.3 + 0.1With Built-in bias resistors. _B 2.1 + 0.13 4 D _B1 1.25 + 0.1Simplify circuit de
9.3. Size:44K kec
krx203u.pdf
KRX203USEMICONDUCTORTECHNICAL DATA EPITAXIAL PLANAR NPN/PNP TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.BFEATURESB1Including two devices in US6.DIM MILLIMETERS1 6_(Ultra Super mini type with 6 leads.) A 2.00 + 0.20_2 5 A1 1.3 + 0.1With Built-in bias resistors. _B 2.1 + 0.13 4 D _B1 1.25 + 0.1Simplify circuit design.
9.4. Size:382K kec
krx206u.pdf
KRX206USEMICONDUCTORTECHNICAL DATA EPITAXIAL PLANAR NPN/PNP TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.BFEATURESB1Including two devices in US6.DIM MILLIMETERS1 6_(Ultra Super mini type with 6 leads.) A 2.00 + 0.20_2 5 A1 1.3 + 0.1With Built-in bias resistors. _B 2.1 + 0.13 4 D _B1 1.25 + 0.1Simplify circuit des
9.5. Size:45K kec
krx201e.pdf
KRX201ESEMICONDUCTOREPITAXIAL PLANAR NPN/PNP TRANSISTORTECHNICAL DATASWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. BB1FEATURESIncluding two devices in TES6.1 6 DIM MILLIMETERS(Thin Extreme Super mini type with 6 pin.) _A 1.6 + 0.05_A1 1.0 + 0.05With Built-in bias resistors. 52_B 1.6 + 0.05_B1 1.2 + 0.05Simplify circuit design.
9.6. Size:44K kec
krx202e.pdf
KRX202ESEMICONDUCTORTECHNICAL DATA EPITAXIAL PLANAR NPN/PNP TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. BB1FEATURESIncluding two devices in TES6.1 6 DIM MILLIMETERS(Thin Extreme Super mini type with 6 pin.) _A 1.6 + 0.05_A1 1.0 + 0.05With Built-in bias resistors. 52_B 1.6 + 0.05_B1 1.2 + 0.05Simplify circuit design.
9.7. Size:44K kec
krx208e.pdf
KRX208ESEMICONDUCTOREPITAXIAL PLANAR NPN/PNP TRANSISTORTECHNICAL DATASWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. BB1FEATURESIncluding two devices in TES6.1 6 DIM MILLIMETERS(Thin Extreme Super mini type with 6 pin.) _A 1.6 + 0.05_A1 1.0 + 0.05With Built-in bias resistors. 52_B 1.6 + 0.05_B1 1.2 + 0.05Simplify circuit design.
9.8. Size:44K kec
krx209e.pdf
KRX209ESEMICONDUCTOREPITAXIAL PLANAR NPN/PNP TRANSISTORTECHNICAL DATASWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. BB1FEATURESIncluding two devices in TES6.1 6 DIM MILLIMETERS(Thin Extreme Super mini type with 6 pin.) _A 1.6 + 0.05_A1 1.0 + 0.05With Built-in bias resistors. 52_B 1.6 + 0.05_B1 1.2 + 0.05Simplify circuit design.
9.9. Size:45K kec
krx202u.pdf
KRX202USEMICONDUCTORTECHNICAL DATA EPITAXIAL PLANAR NPN/PNP TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.BFEATURESB1Including two devices in US6.DIM MILLIMETERS1 6_(Ultra Super mini type with 6 leads.) A 2.00 + 0.20_2 5 A1 1.3 + 0.1With Built-in bias resistors. _B 2.1 + 0.13 4 D _B1 1.25 + 0.1Simplify circuit design.
9.10. Size:44K kec
krx203e.pdf
KRX203ESEMICONDUCTORTECHNICAL DATA EPITAXIAL PLANAR NPN/PNP TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. BB1FEATURESIncluding two devices in TES6.1 6 DIM MILLIMETERS(Thin Extreme Super mini type with 6 pin.) _A 1.6 + 0.05_A1 1.0 + 0.05With Built-in bias resistors. 52_B 1.6 + 0.05_B1 1.2 + 0.05Simplify circuit design.
9.11. Size:46K kec
krx201u.pdf
KRX201USEMICONDUCTORTECHNICAL DATA EPITAXIAL PLANAR NPN/PNP TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.BFEATURESB1Including two devices in US6.DIM MILLIMETERS1 6_(Ultra Super mini type with 6 leads.) A 2.00 + 0.20_2 5 A1 1.3 + 0.1With Built-in bias resistors. _B 2.1 + 0.13 4 D _B1 1.25 + 0.1Simplify circuit design.
9.12. Size:44K kec
krx207e.pdf
KRX207ESEMICONDUCTOREPITAXIAL PLANAR NPN/PNP TRANSISTORTECHNICAL DATASWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. BB1FEATURESIncluding two devices in TES6.1 6 DIM MILLIMETERS(Thin Extreme Super mini type with 6 pin.) _A 1.6 + 0.05_A1 1.0 + 0.05With Built-in bias resistors. 52_B 1.6 + 0.05_B1 1.2 + 0.05Simplify circuit design.
9.13. Size:45K kec
krx204e.pdf
KRX204ESEMICONDUCTORTECHNICAL DATA EPITAXIAL PLANAR NPN/PNP TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. BB1FEATURESIncluding two devices in TES6.1 6 DIM MILLIMETERS(Thin Extreme Super mini type with 6 pin.) _A 1.6 + 0.05_A1 1.0 + 0.05With Built-in bias resistors. 52_B 1.6 + 0.05_B1 1.2 + 0.05Simplify circuit design.
9.14. Size:46K kec
krx204u.pdf
KRX204USEMICONDUCTORTECHNICAL DATA EPITAXIAL PLANAR NPN/PNP TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.BFEATURESB1Including two devices in US6.DIM MILLIMETERS1 6_(Ultra Super mini type with 6 leads.) A 2.00 + 0.20_2 5 A1 1.3 + 0.1With Built-in bias resistors. _B 2.1 + 0.13 4 D _B1 1.25 + 0.1Simplify circuit design.
9.15. Size:45K kec
krx206e.pdf
KRX206ESEMICONDUCTORTECHNICAL DATA EPITAXIAL PLANAR NPN/PNP TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. BB1FEATURESIncluding two devices in TES6.1 6 DIM MILLIMETERS(Thin Extreme Super mini type with 6 Pin.) _A 1.6 + 0.05_A1 1.0 + 0.05With Built-in bias resistors. 52_B 1.6 + 0.05_B1 1.2 + 0.05Simplify circuit design.
9.16. Size:44K kec
krx209u.pdf
KRX209USEMICONDUCTOREPITAXIAL PLANAR NPN/PNP TRANSISTORTECHNICAL DATASWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.BFEATURESB1Including two devices in US6.DIM MILLIMETERS1 6_(Ultra Super mini type with 6 leads.) A 2.00 + 0.20_2 5 A1 1.3 + 0.1With Built-in bias resistors. _B 2.1 + 0.13 4 D _B1 1.25 + 0.1Simplify circuit design.
Otros transistores... 2N3200
, 2N3201
, 2N3202
, 2N3203
, 2N3204
, 2N3205
, 2N3206
, 2N3207
, B772
, 2N3209
, 2N3209AQF
, 2N3209CSM
, 2N3209DCSM
, 2N3209L
, 2N321
, 2N3210
, 2N3211
.
