KRX205E Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: KRX205E 📄📄
Material: Si
Polaridad de transistor: Pre-Biased-NPN*PNP
Resistencia de Entrada Base R1 = 4.7 kOhm
Resistencia Base-Emisor R2 = 4.7 kOhm
Ratio típica de resistencia R1/R2 = 1
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.2 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 250 MHz
Ganancia de corriente contínua (hFE): 120
Encapsulados: TES6
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KRX205E datasheet
..1. Size:377K kec
krx205e.pdf 
KRX205E SEMICONDUCTOR TECHNICAL DATA EPITAXIAL PLANAR NPN/PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES Including two devices in TES6. 1 6 DIM MILLIMETERS (Thin Extreme Super mini type with 6 pin.) _ A 1.6 + 0.05 _ A1 1.0 + 0.05 With Built-in bias resistors. 5 2 _ B 1.6 + 0.05 _ B1 1.2 + 0.05 Simplify circuit desi
8.1. Size:379K kec
krx205u.pdf
KRX205U SEMICONDUCTOR TECHNICAL DATA EPITAXIAL PLANAR NPN/PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B FEATURES B1 Including two devices in US6. DIM MILLIMETERS 1 6 _ (Ultra Super mini type with 6 leads.) A 2.00 + 0.20 _ 2 5 A1 1.3 + 0.1 With Built-in bias resistors. _ B 2.1 + 0.1 3 4 D _ B1 1.25 + 0.1 Simplify circuit des
9.1. Size:382K kec
krx207u.pdf
KRX207U SEMICONDUCTOR EPITAXIAL PLANAR NPN/PNP TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B FEATURES B1 Including two devices in US6. DIM MILLIMETERS 1 6 _ (Ultra Super mini type with 6 leads.) A 2.00 + 0.20 _ 2 5 A1 1.3 + 0.1 With Built-in bias resistors. _ B 2.1 + 0.1 3 4 D _ B1 1.25 + 0.1 Simplify circuit de
9.2. Size:382K kec
krx208u.pdf
KRX208U SEMICONDUCTOR EPITAXIAL PLANAR NPN/PNP TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B FEATURES B1 Including two devices in US6. DIM MILLIMETERS 1 6 _ (Ultra Super mini type with 6 leads.) A 2.00 + 0.20 _ 2 5 A1 1.3 + 0.1 With Built-in bias resistors. _ B 2.1 + 0.1 3 4 D _ B1 1.25 + 0.1 Simplify circuit de
9.3. Size:44K kec
krx203u.pdf
KRX203U SEMICONDUCTOR TECHNICAL DATA EPITAXIAL PLANAR NPN/PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B FEATURES B1 Including two devices in US6. DIM MILLIMETERS 1 6 _ (Ultra Super mini type with 6 leads.) A 2.00 + 0.20 _ 2 5 A1 1.3 + 0.1 With Built-in bias resistors. _ B 2.1 + 0.1 3 4 D _ B1 1.25 + 0.1 Simplify circuit design.
9.4. Size:382K kec
krx206u.pdf
KRX206U SEMICONDUCTOR TECHNICAL DATA EPITAXIAL PLANAR NPN/PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B FEATURES B1 Including two devices in US6. DIM MILLIMETERS 1 6 _ (Ultra Super mini type with 6 leads.) A 2.00 + 0.20 _ 2 5 A1 1.3 + 0.1 With Built-in bias resistors. _ B 2.1 + 0.1 3 4 D _ B1 1.25 + 0.1 Simplify circuit des
9.5. Size:45K kec
krx201e.pdf
KRX201E SEMICONDUCTOR EPITAXIAL PLANAR NPN/PNP TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES Including two devices in TES6. 1 6 DIM MILLIMETERS (Thin Extreme Super mini type with 6 pin.) _ A 1.6 + 0.05 _ A1 1.0 + 0.05 With Built-in bias resistors. 5 2 _ B 1.6 + 0.05 _ B1 1.2 + 0.05 Simplify circuit design.
9.6. Size:44K kec
krx202e.pdf
KRX202E SEMICONDUCTOR TECHNICAL DATA EPITAXIAL PLANAR NPN/PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES Including two devices in TES6. 1 6 DIM MILLIMETERS (Thin Extreme Super mini type with 6 pin.) _ A 1.6 + 0.05 _ A1 1.0 + 0.05 With Built-in bias resistors. 5 2 _ B 1.6 + 0.05 _ B1 1.2 + 0.05 Simplify circuit design.
9.7. Size:44K kec
krx208e.pdf
KRX208E SEMICONDUCTOR EPITAXIAL PLANAR NPN/PNP TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES Including two devices in TES6. 1 6 DIM MILLIMETERS (Thin Extreme Super mini type with 6 pin.) _ A 1.6 + 0.05 _ A1 1.0 + 0.05 With Built-in bias resistors. 5 2 _ B 1.6 + 0.05 _ B1 1.2 + 0.05 Simplify circuit design.
9.8. Size:44K kec
krx209e.pdf
KRX209E SEMICONDUCTOR EPITAXIAL PLANAR NPN/PNP TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES Including two devices in TES6. 1 6 DIM MILLIMETERS (Thin Extreme Super mini type with 6 pin.) _ A 1.6 + 0.05 _ A1 1.0 + 0.05 With Built-in bias resistors. 5 2 _ B 1.6 + 0.05 _ B1 1.2 + 0.05 Simplify circuit design.
9.9. Size:45K kec
krx202u.pdf
KRX202U SEMICONDUCTOR TECHNICAL DATA EPITAXIAL PLANAR NPN/PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B FEATURES B1 Including two devices in US6. DIM MILLIMETERS 1 6 _ (Ultra Super mini type with 6 leads.) A 2.00 + 0.20 _ 2 5 A1 1.3 + 0.1 With Built-in bias resistors. _ B 2.1 + 0.1 3 4 D _ B1 1.25 + 0.1 Simplify circuit design.
9.10. Size:44K kec
krx203e.pdf
KRX203E SEMICONDUCTOR TECHNICAL DATA EPITAXIAL PLANAR NPN/PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES Including two devices in TES6. 1 6 DIM MILLIMETERS (Thin Extreme Super mini type with 6 pin.) _ A 1.6 + 0.05 _ A1 1.0 + 0.05 With Built-in bias resistors. 5 2 _ B 1.6 + 0.05 _ B1 1.2 + 0.05 Simplify circuit design.
9.11. Size:46K kec
krx201u.pdf
KRX201U SEMICONDUCTOR TECHNICAL DATA EPITAXIAL PLANAR NPN/PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B FEATURES B1 Including two devices in US6. DIM MILLIMETERS 1 6 _ (Ultra Super mini type with 6 leads.) A 2.00 + 0.20 _ 2 5 A1 1.3 + 0.1 With Built-in bias resistors. _ B 2.1 + 0.1 3 4 D _ B1 1.25 + 0.1 Simplify circuit design.
9.12. Size:44K kec
krx207e.pdf
KRX207E SEMICONDUCTOR EPITAXIAL PLANAR NPN/PNP TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES Including two devices in TES6. 1 6 DIM MILLIMETERS (Thin Extreme Super mini type with 6 pin.) _ A 1.6 + 0.05 _ A1 1.0 + 0.05 With Built-in bias resistors. 5 2 _ B 1.6 + 0.05 _ B1 1.2 + 0.05 Simplify circuit design.
9.13. Size:45K kec
krx204e.pdf
KRX204E SEMICONDUCTOR TECHNICAL DATA EPITAXIAL PLANAR NPN/PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES Including two devices in TES6. 1 6 DIM MILLIMETERS (Thin Extreme Super mini type with 6 pin.) _ A 1.6 + 0.05 _ A1 1.0 + 0.05 With Built-in bias resistors. 5 2 _ B 1.6 + 0.05 _ B1 1.2 + 0.05 Simplify circuit design.
9.14. Size:46K kec
krx204u.pdf
KRX204U SEMICONDUCTOR TECHNICAL DATA EPITAXIAL PLANAR NPN/PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B FEATURES B1 Including two devices in US6. DIM MILLIMETERS 1 6 _ (Ultra Super mini type with 6 leads.) A 2.00 + 0.20 _ 2 5 A1 1.3 + 0.1 With Built-in bias resistors. _ B 2.1 + 0.1 3 4 D _ B1 1.25 + 0.1 Simplify circuit design.
9.15. Size:45K kec
krx206e.pdf
KRX206E SEMICONDUCTOR TECHNICAL DATA EPITAXIAL PLANAR NPN/PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES Including two devices in TES6. 1 6 DIM MILLIMETERS (Thin Extreme Super mini type with 6 Pin.) _ A 1.6 + 0.05 _ A1 1.0 + 0.05 With Built-in bias resistors. 5 2 _ B 1.6 + 0.05 _ B1 1.2 + 0.05 Simplify circuit design.
9.16. Size:44K kec
krx209u.pdf
KRX209U SEMICONDUCTOR EPITAXIAL PLANAR NPN/PNP TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B FEATURES B1 Including two devices in US6. DIM MILLIMETERS 1 6 _ (Ultra Super mini type with 6 leads.) A 2.00 + 0.20 _ 2 5 A1 1.3 + 0.1 With Built-in bias resistors. _ B 2.1 + 0.1 3 4 D _ B1 1.25 + 0.1 Simplify circuit design.
Otros transistores... KRX201E, KRX201U, KRX202E, KRX202U, KRX203E, KRX203U, KRX204E, KRX204U, 2SC5198, KRX205U, KRX206E, KRX206U, KRX207E, KRX207U, KRX208E, KRX208U, KRX209E
