KRC231S
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: KRC231S
Código: NW
Material: Si
Polaridad de transistor: Pre-Biased-NPN
Resistencia de Entrada Base R1 = 2.2 kOhm
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.2
W
Tensión colector-base (Vcb): 30
V
Tensión colector-emisor (Vce): 15
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 0.6
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 200
MHz
Ganancia de corriente contínua (hfe): 200
Paquete / Cubierta:
SOT-23
Búsqueda de reemplazo de transistor bipolar KRC231S
KRC231S
Datasheet (PDF)
..1. Size:952K kexin
krc231s.pdf
SMD Type TransistorsNPN TransistorsKRC231S ~ KRC235SSOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features With Built-in Bias Resistors.C Simplify Circuit Design.1 2+0.1+0.050.95-0.1 0.1-0.01R 1+0.11.9-0.1B1.Base2.EmitterE 3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 C
0.1. Size:374K kec
krc231s-krc235s.pdf
SEMICONDUCTOR KRC231S~KRC235STECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORSWITCHING APPLICATION.AUDIO MUTING APPLICATION.INTERFACE CIRCUIT AND DRIVER EL B LCIRCUIT APPLICATION. DIM MILLIMETERS_+A 2.93 0.20B 1.30+0.20/-0.15FEATURESC 1.30 MAX23 D 0.40+0.15/-0.05With Built-in Bias Resistors.E 2.40+0.30/-0.201G 1.90Simplify Circuit Design.H 0.95R
8.1. Size:73K kec
krc231m-krc235m.pdf
SEMICONDUCTOR KRC231M~KRC235MTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORSWITCHING APPLICATION.AUDIO MUTING APPLICATION.INTERFACE CIRCUIT AND DRIVER BCIRCUIT APPLICATION. DIM MILLIMETERSOFEATURESA 3.20 MAXHM B 4.30 MAX With Built-in Bias Resistors.C 0.55 MAX_ Simplify Circuit Design. D 2.40 + 0.15E 1.27 Reduce a Quantity of Parts and Manufacturing Process.
8.2. Size:484K kec
krc231m-krc235m 1.pdf
SEMICONDUCTOR KRC231M~KRC235MTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORSWITCHING APPLICATION.AUDIO MUTING APPLICATION.INTERFACE CIRCUIT AND DRIVER BCIRCUIT APPLICATION. DIM MILLIMETERSOFEATURESA 3.20 MAXHM B 4.30 MAXWith Built-in Bias Resistors.C 0.55 MAX_Simplify Circuit Design. D 2.40 + 0.15E 1.27Reduce a Quantity of Parts and Manufacturing Proces
Otros transistores... 2N3200
, 2N3201
, 2N3202
, 2N3203
, 2N3204
, 2N3205
, 2N3206
, 2N3207
, B772
, 2N3209
, 2N3209AQF
, 2N3209CSM
, 2N3209DCSM
, 2N3209L
, 2N321
, 2N3210
, 2N3211
.