KRC112 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: KRC112
Material: Si
Polaridad de transistor: Pre-Biased-NPN
Resistencia de Entrada Base R1 = 100 kOhm
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.625 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 250 MHz
Ganancia de corriente contínua (hfe): 120
Paquete / Cubierta: TO-92
Búsqueda de reemplazo de transistor bipolar KRC112
KRC112 Datasheet (PDF)
krc110-krc114.pdf
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krc116-krc122.pdf
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krc110m-krc114m.pdf
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krc119s.pdf
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krc116m-krc122m.pdf
SEMICONDUCTOR KRC116M~KRC122MTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORSWITCHING APPLICATION.INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONBFEATURESWith Built-in Bias Resistors.DIM MILLIMETERSOSimplify Circuit Design.A 3.20 MAXHM B 4.30 MAXReduce a Quantity of Parts and Manufacturing Process.C 0.55 MAX_D 2.40 + 0.15E 1.27F 2.30C_+G 14.00 0
krc116s-krc122s.pdf
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krc110s-krc114s.pdf
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krc110s-114s.pdf
SMD Type TransistorsNPN TransistorsKRC110S ~ KRC114SSOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features With Built in Bias Resistors Simplify Circuit Design1 2 Reduce a Quantity of Parts and Manufaturing Process+0.1+0.050.95-0.1 0.1 -0.011.9+0.1-0.1 Digital Transistors1.BaseC2.Emitter3.collectorR1BE Absolute Maximum Ratin
krc116s-122s.pdf
SMD Type TransistorsNPN TransistorsKRC116S ~ KRC122SSOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features With Built in Bias Resistors Simplify Circuit Design 1 2+0.1+0.050.95-0.1 0.1-0.01 Reduce a Quantity of Parts and Manufaturing Process+0.11.9-0.1 Digital Transistors1.IN2.Common3.OUTOUTR1INR2COMMON Absolute Maximum Rat
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Liste
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