All Transistors. KRC112 Datasheet

 

KRC112 Datasheet, Equivalent, Cross Reference Search

Type Designator: KRC112

Material of Transistor: Si

Polarity: Pre-Biased-NPN

Built in Bias Resistor R1 = 100 kOhm

Maximum Collector Power Dissipation (Pc): 0.625 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 250 MHz

Forward Current Transfer Ratio (hFE), MIN: 120

Noise Figure, dB: -

Package: TO-92

KRC112 Transistor Equivalent Substitute - Cross-Reference Search

 

KRC112 Datasheet (PDF)

5.1. krc110m-krc114m.pdf Size:391K _kec

KRC112
KRC112

SEMICONDUCTOR KRC110M~KRC114M EPITAXIAL PLANAR NPN TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B FEATURES ·With Built-in Bias Resistors. ·Simplify Circuit Design. DIM MILLIMETERS O A 3.20 MAX ·Reduce a Quantity of Parts and Manufacturing Process. H M B 4.30 MAX C 0.55 MAX _ D 2.40 + 0.15 E 1.27 F 2.30 C _ + G 14.

5.2. krc116-krc122.pdf Size:404K _kec

KRC112
KRC112

SEMICONDUCTOR KRC116~KRC122 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION B C FEATURES ·With Built-in Bias Resistors. ·Simplify Circuit Design. ·Reduce a Quantity of Parts and Manufacturing Process. N DIM MILLIMETERS A 4.70 MAX E K B 4.80 MAX G C 3.70 MAX D D 0.45 E 1.00 F 1.27 G 0.85 H 0.45 _ H

 5.3. krc110-krc114.pdf Size:47K _kec

KRC112
KRC112

SEMICONDUCTOR KRC110~KRC114 EPITAXIAL PLANAR NPN TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B C FEATURES ·With Built-in Bias Resistors. ·Simplify Circuit Design. ·Reduce a Quantity of Parts and Manufacturing Process. N DIM MILLIMETERS A 4.70 MAX E K B 4.80 MAX G C 3.70 MAX D D 0.45 E 1.00 F 1.27 EQUIVALENT CIRCUIT

5.4. krc116s-krc122s.pdf Size:428K _kec

KRC112
KRC112

SEMICONDUCTOR KRC116S~KRC122S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION E L B L FEATURES DIM MILLIMETERS _ + A 2.93 0.20 ·With Built-in Bias Resistors. B 1.30+0.20/-0.15 ·Simplify Circuit Design. C 1.30 MAX 2 3 D 0.40+0.15/-0.05 ·Reduce a Quantity of Parts and Manufacturing Process. E 2.40+0.30/-0.2

 5.5. krc110s-krc114s.pdf Size:393K _kec

KRC112
KRC112

SEMICONDUCTOR KRC110S~KRC114S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. E L B L FEATURES DIM MILLIMETERS ·With Built-in Bias Resistors. _ + A 2.93 0.20 B 1.30+0.20/-0.15 ·Simplify Circuit Design. C 1.30 MAX 2 3 D 0.40+0.15/-0.05 ·Reduce a Quantity of Parts and Manufacturing Process. E 2.40+0.30/-

5.6. krc119s.pdf Size:349K _kec

KRC112
KRC112

SEMICONDUCTOR KRC119S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION FEATURES E ·With Built-in Bias Resistors. L B L DIM MILLIMETERS ·Simplify Circuit Design. _ + A 2.93 0.20 B 1.30+0.20/-0.15 ·Reduce a Quantity of Parts and Manufacturing Process. C 1.30 MAX 2 3 D 0.40+0.15/-0.05 E 2.40+0.30/-0.20 1 G

5.7. krc116m-krc122m.pdf Size:437K _kec

KRC112
KRC112

SEMICONDUCTOR KRC116M~KRC122M TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION B FEATURES ·With Built-in Bias Resistors. DIM MILLIMETERS O ·Simplify Circuit Design. A 3.20 MAX H M B 4.30 MAX ·Reduce a Quantity of Parts and Manufacturing Process. C 0.55 MAX _ D 2.40 + 0.15 E 1.27 F 2.30 C _ + G 14.00 0

5.8. krc110s-114s.pdf Size:812K _kexin

KRC112
KRC112

SMD Type Transistors NPN Transistors KRC110S ~ KRC114S SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 ■ Features ● With Built in Bias Resistors ● Simplify Circuit Design 1 2 ● Reduce a Quantity of Parts and Manufaturing Process +0.1 +0.05 0.95-0.1 0.1 -0.01 1.9+0.1 -0.1 ● Digital Transistors 1.Base C 2.Emitter 3.collector R1 B E ■ Absolute Maximum Ratin

5.9. krc116s-122s.pdf Size:853K _kexin

KRC112
KRC112

SMD Type Transistors NPN Transistors KRC116S ~ KRC122S SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 ■ Features ● With Built in Bias Resistors ● Simplify Circuit Design 1 2 +0.1 +0.05 0.95-0.1 0.1-0.01 ● Reduce a Quantity of Parts and Manufaturing Process +0.1 1.9-0.1 ● Digital Transistors 1.IN 2.Common 3.OUT OUT R1 IN R2 COMMON ■ Absolute Maximum Rat

Datasheet: 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2N2219 , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 , 2SA1815-5 , 2SA182 , 2SA1822 , 2SA183 .

 

 
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