KTC3552T Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: KTC3552T

Código: HL

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.9 W

Tensión colector-base (Vcb): 80 V

Tensión colector-emisor (Vce): 50 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 3 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 380 MHz

Capacitancia de salida (Cc): 13 pF

Ganancia de corriente contínua (hFE): 200

Encapsulados: TSM

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KTC3552T datasheet

 ..1. Size:377K  kec
 ktc3552t.pdf pdf_icon

KTC3552T

SEMICONDUCTOR KTC3552T TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR DC-DC CONVERTERS RELAY DRIVERS, LAMP DRIVERS, MOTOR DRIVERS, STROBES APPLICATION. E B FEATURES K DIM MILLIMETERS Adoption of FBET, MBIT Processes. _ A 2.9 + 0.2 B 1.6+0.2/-0.1 High Current Capacitance. _ C 0.70 + 0.05 2 3 Low Collector-to-Emitter Saturation Voltage. _ D 0.4 + 0.1 E 2.8+0.2/-0.3 Hig

 8.1. Size:89K  kec
 ktc3553t.pdf pdf_icon

KTC3552T

SEMICONDUCTOR KTC3553T TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR RELAY DRIVERS, LAMP DRIVERS, MOTOR DRIVERS AND STROBES APPLICATION. E B FEATURES K DIM MILLIMETERS Adoption of MBIT Processes. _ A 2.9 + 0.2 B 1.6+0.2/-0.1 High Current Capacitance. _ C 0.70 + 0.05 2 3 Low Collector-to-Emitter Saturation Voltage. _ D 0.4 + 0.1 E 2.8+0.2/-0.3 Ultrasmall-Sized Package permit

 8.2. Size:89K  kec
 ktc3551t.pdf pdf_icon

KTC3552T

SEMICONDUCTOR KTC3551T TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR RELAY DRIVERS, LAMP DRIVERS, MOTOR DRIVERS APPLICATION. E B FEATURES K DIM MILLIMETERS Adoption of MBIT Processes. _ A 2.9 + 0.2 B 1.6+0.2/-0.1 Large Current Capacitance. _ C 0.70 + 0.05 2 3 Low Collector-to-Emitter Saturation Voltage. _ D 0.4 + 0.1 E 2.8+0.2/-0.3 High-Speed Switching. _ F 1.9 + 0.2 1

 8.3. Size:948K  kexin
 ktc3551t.pdf pdf_icon

KTC3552T

SMD Type Transistors NPN Transistors KTC3551T SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Adoption of MBIT Processes. Large Current Capacitance. 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 Low Collector-to-Emitter Saturation Voltage. 1.9+0.1 -0.1 High-Speed Switching. High Allowable Power Dis sipation. 1.Base Complementary to KTA1551T. 2.

MOSTRAR MÁS

Otros transistores... KRC113M, KRC114, KRC114M, KRC160F, KRC161F, KRC163F, KRC164F, KRC234M, 2222A, KTC3571S, KTC3572, KRA110M, KRA111M, KRA114M, KRA119S, KRA160F, KRA161F