KRA119M . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

SEMICONDUCTOR KRA119S TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION E FEATURES L B L With Built-in Bias Resistors. DIM MILLIMETERS _ + A 2.93 0.20 Simplify Circuit Design. B 1.30+0.20/-0.15 C 1.30 MAX Reduce a Quantity of Parts and Manufacturing Process. 2 3 D 0.40+0.15/-0.05 E 2.40+0.30/-0.20 1 G

SEMICONDUCTOR KRA116 KRA122 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION B C FEATURES With Built-in Bias Resistors. Simplify Circuit Design. Reduce a Quantity of Parts and Manufacturing Process. N DIM MILLIMETERS A 4.70 MAX E K B 4.80 MAX G C 3.70 MAX D D 0.45 E 1.00 F 1.27 G 0.85 H 0.45 _ H

SEMICONDUCTOR KRA116S KRA122S TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION E L B L FEATURES DIM MILLIMETERS _ + 2.93 0.20 With Built-in Bias Resistors. A B 1.30+0.20/-0.15 Simplify Circuit Design. C 1.30 MAX 2 3 D 0.45+0.15/-0.05 Reduce a Quantity of Parts and Manufacturing Process. E 2.40+0.30/-0.20 1

SEMICONDUCTOR KRA116M KRA122M TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION B FEATURES With Built-in Bias Resistors. DIM MILLIMETERS O Simplify Circuit Design. A 3.20 MAX H M B 4.30 MAX Reduce a Quantity of Parts and Manufacturing Process. C 0.55 MAX _ D 2.40 + 0.15 E 1.27 F 2.30 C _ + G 14.00 0.50 H

SEMICONDUCTOR KRA110S KRA114S EPITAXIAL PLANAR PNP TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. E L B L FEATURES DIM MILLIMETERS _ + A 2.93 0.20 With Built-in Bias Resistors. B 1.30+0.20/-0.15 Simplify Circuit Design. C 1.30 MAX 2 3 D 0.40+0.15/-0.05 Reduce a Quantity of Parts and Manufacturing Process. E 2.40+0.30/

SEMICONDUCTOR KRA110M KRA114M EPITAXIAL PLANAR PNP TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B FEATURES With Built-in Bias Resistors. Simplify Circuit Design. DIM MILLIMETERS O A 3.20 MAX Reduce a Quantity of Parts and Manufacturing Process. H M B 4.30 MAX C 0.55 MAX _ D 2.40 + 0.15 E 1.27 F 2.30 C _ + G 14.

SEMICONDUCTOR KRA110 KRA114 EPITAXIAL PLANAR PNP TRANSISTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B C FEATURES With Built-in Bias Resistors. Simplify Circuit Design. Reduce a Quantity of Parts and Manufacturing Process. N DIM MILLIMETERS A 4.70 MAX E K B 4.80 MAX G C 3.70 MAX D D 0.45 E 1.00 F 1.27 EQUIVALENT CIRCUIT