KRA159F . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: KRA159F
Código: GJ
Material: Si
Polaridad de transistor: Pre-Biased-PNP
Resistencia de Entrada Base R1 = 47 kOhm
Resistencia Base-Emisor R2 = 22 kOhm
Ratio típica de resistencia R1/R2 = 2.1
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.05 W
Tensión colector-emisor (Vce): 20 V
Corriente del colector DC máxima (Ic): 0.05 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 100
Paquete / Cubierta: TFSM
Búsqueda de reemplazo de transistor bipolar KRA159F
KRA159F Datasheet (PDF)
kra157f kra158f kra159f.pdf
SEMICONDUCTOR KRA157F~KRA159FTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES EWith Built-in Bias Resistors.BSimplify Circuit Design.Reduce a Quantity of Parts and Manufacturing Process.Thin Fine Pitch Small Package. DIM MILLIMETERS2_A 0.6 + 0.053 _+B 0.8 0.05C 0.38+0.02/-0.041_
kra157f-kra159f.pdf
SEMICONDUCTOR KRA157F~KRA159FTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES EWith Built-in Bias Resistors.BSimplify Circuit Design.Reduce a Quantity of Parts and Manufacturing Process.Thin Fine Pitch Small Package. DIM MILLIMETERS2_A 0.6 + 0.053 _+B 0.8 0.05C 0.38+0.02/-0.0
kra151f-kra154f.pdf
SEMICONDUCTOR KRA151F~KRA154FTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES EWith Built-in Bias Resistors.BSimplify Circuit Design.Reduce a Quantity of Parts and Manufacturing Process.Thin Fine Pitch Small Package. DIM MILLIMETERS2_A 0.6 + 0.053 _+B 0.8 0.05C 0.38+0.02/-0.0
Otros transistores... HA9079 , HA9500 , HA9501 , HA9502 , HA9531 , HA9531A , HA9532 , HA9532A , 2SA1015 , HCT2907A , HCT2907M , HDA412 , HDA420 , HDA496 , HEP637 , HEPG0001 , HEPG0002 .
