KRC105M Todos los transistores

SEMICONDUCTOR KRC101S KRC106S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. E L B L FEATURES DIM MILLIMETERS With Built-in Bias Resistors. _ + A 2.93 0.20 B 1.30+0.20/-0.15 Simplify Circuit Design. C 1.30 MAX 2 3 D 0.40+0.15/-0.05 Reduce a Quantity of Parts and Manufacturing Process. E 2.40+0.30/

SEMICONDUCTOR KRC101 KRC106 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B C FEATURES With Built-in Bias Resistors. Simplify Circuit Design. Reduce a Quantity of Parts and Manufacturing Process. N DIM MILLIMETERS A 4.70 MAX E K B 4.80 MAX G C 3.70 MAX D D 0.45 E 1.00 F 1.27 G 0.85 H 0.45 _

SEMICONDUCTOR KRC101S KRC106S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. E L B L FEATURES DIM MILLIMETERS With Built-in Bias Resistors. _ + A 2.93 0.20 B 1.30+0.20/-0.15 Simplify Circuit Design. C 1.30 MAX 2 3 D 0.40+0.15/-0.05 Reduce a Quantity of Parts and Manufacturing Process. E 2.40+0.30/

SEMICONDUCTOR KRC107 KRC109 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B C FEATURES With Built-in Bias Resistors Simplify Circuit Design Reduce a Quantity of Parts and Manufacturing Process N DIM MILLIMETERS A 4.70 MAX E K B 4.80 MAX G C 3.70 MAX D D 0.45 E 1.00 F 1.27 G 0.85 H 0.45 _ H

SEMICONDUCTOR KRC101M KRC106M TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B FEATURES With Built-in Bias Resistors. Simplify Circuit Design. DIM MILLIMETERS O A 3.20 MAX Reduce a Quantity of Parts and Manufacturing Process. H M B 4.30 MAX C 0.55 MAX _ D 2.40 + 0.15 E 1.27 F 2.30 C _ + G 14.

SEMICONDUCTOR KRC107S KRC109S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. E L B L FEATURES DIM MILLIMETERS _ With Built-in Bias Resistors. A 2.93 0.20 + B 1.30+0.20/-0.15 Simplify Circuit Design. C 1.30 MAX 2 3 D 0.40+0.15/-0.05 Reduce a Quantity of Parts and Manufacturing Process. E 2.40+0.30/

SEMICONDUCTOR KRC107M KRC109M TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B FEATURES With Built-in Bias Resistors Simplify Circuit Design DIM MILLIMETERS O A 3.20 MAX Reduce a Quantity of Parts and Manufacturing Process H M B 4.30 MAX C 0.55 MAX _ D 2.40 + 0.15 E 1.27 F 2.30 C _ + G 14.00

SMD Type Transistors NPN Transistors KRC101S KRC106S SOT-23 Unit mm 2.9+0.1 -0.1 +0.1 0.4-0.1 3 Features With Built-in Bias Resistors. Simplify Circuit Design. 1 2 Reduce a Quantity of Parts and Manufacturing Process. +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.IN(B) 2.COMMON(E) 3.OUT(C) BIAS RESISTOR VALUES TYPE NO. R1(k ) R2(k ) OUT KRC101S

SMD Type Transistors NPN Transistors KRC107S KRC109S SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features With Built in Bias Resistors Simplify Circuit Design 1 2 Reduce a Quantity of Parts and Manufaturing Process +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 Digital Transistors 1.IN OUT 2.Common BIAS RESISTOR VALUES 3.OUT TYPE NO. R1(k ) R2