All Transistors. KRC105M Datasheet

 

KRC105M Datasheet, Equivalent, Cross Reference Search


   Type Designator: KRC105M
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN
   Built in Bias Resistor R1 = 2.2 kOhm
   Built in Bias Resistor R2 = 47 kOhm

Typical Resistor Ratio R1/R2 = 0.047
   Maximum Collector Power Dissipation (Pc): 0.4 W
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 200 MHz
   Forward Current Transfer Ratio (hFE), MIN: 80
   Noise Figure, dB: -
   Package: TO-92M

 KRC105M Transistor Equivalent Substitute - Cross-Reference Search

   

KRC105M Datasheet (PDF)

 8.1. Size:391K  kec
krc101s krc102s krc103s krc104s krc105s krc106s.pdf

KRC105M
KRC105M

SEMICONDUCTOR KRC101S~KRC106STECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. EL B LFEATURES DIM MILLIMETERSWith Built-in Bias Resistors. _+A 2.93 0.20B 1.30+0.20/-0.15Simplify Circuit Design.C 1.30 MAX23 D 0.40+0.15/-0.05Reduce a Quantity of Parts and Manufacturing Process.E 2.40+0.30/

 9.1. Size:401K  kec
krc101-krc106.pdf

KRC105M
KRC105M

SEMICONDUCTOR KRC101~KRC106TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B CFEATURES With Built-in Bias Resistors.Simplify Circuit Design.Reduce a Quantity of Parts and Manufacturing Process.N DIM MILLIMETERSA 4.70 MAXEKB 4.80 MAXGC 3.70 MAXDD 0.45E 1.00F 1.27G 0.85H 0.45_

 9.2. Size:391K  kec
krc101s-krc106s.pdf

KRC105M
KRC105M

SEMICONDUCTOR KRC101S~KRC106STECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. EL B LFEATURES DIM MILLIMETERSWith Built-in Bias Resistors. _+A 2.93 0.20B 1.30+0.20/-0.15Simplify Circuit Design.C 1.30 MAX23 D 0.40+0.15/-0.05Reduce a Quantity of Parts and Manufacturing Process.E 2.40+0.30/

 9.3. Size:378K  kec
krc107-krc109.pdf

KRC105M
KRC105M

SEMICONDUCTOR KRC107~KRC109TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B CFEATURES With Built-in Bias ResistorsSimplify Circuit DesignReduce a Quantity of Parts and Manufacturing ProcessN DIM MILLIMETERSA 4.70 MAXEKB 4.80 MAXGC 3.70 MAXDD 0.45E 1.00F 1.27G 0.85H 0.45_H

 9.4. Size:426K  kec
krc101m-krc106m.pdf

KRC105M
KRC105M

SEMICONDUCTOR KRC101M~KRC106MTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. BFEATURES With Built-in Bias Resistors.Simplify Circuit Design.DIM MILLIMETERSOA 3.20 MAXReduce a Quantity of Parts and Manufacturing Process.HM B 4.30 MAXC 0.55 MAX_D 2.40 + 0.15E 1.27F 2.30C_+G 14.

 9.5. Size:369K  kec
krc107s-krc109s.pdf

KRC105M
KRC105M

SEMICONDUCTOR KRC107S~KRC109STECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. EL B LFEATURES DIM MILLIMETERS_With Built-in Bias Resistors. A 2.93 0.20+B 1.30+0.20/-0.15Simplify Circuit Design.C 1.30 MAX23 D 0.40+0.15/-0.05Reduce a Quantity of Parts and Manufacturing Process.E 2.40+0.30/

 9.6. Size:391K  kec
krc107m-krc109m.pdf

KRC105M
KRC105M

SEMICONDUCTOR KRC107M~KRC109MTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. BFEATURES With Built-in Bias ResistorsSimplify Circuit DesignDIM MILLIMETERSOA 3.20 MAXReduce a Quantity of Parts and Manufacturing ProcessHM B 4.30 MAXC 0.55 MAX_D 2.40 + 0.15E 1.27F 2.30C_+G 14.00

 9.7. Size:2134K  kexin
krc101s-106s.pdf

KRC105M
KRC105M

SMD Type TransistorsNPN TransistorsKRC101S ~ KRC106SSOT-23Unit: mm2.9+0.1-0.1+0.10.4-0.13 Features With Built-in Bias Resistors. Simplify Circuit Design.1 2 Reduce a Quantity of Parts and Manufacturing Process.+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.IN(B)2.COMMON(E)3.OUT(C)BIAS RESISTOR VALUESTYPE NO.R1(k ) R2(k )OUTKRC101S

 9.8. Size:1442K  kexin
krc107s-109s.pdf

KRC105M
KRC105M

SMD Type TransistorsNPN TransistorsKRC107S ~ KRC109SSOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features With Built in Bias Resistors Simplify Circuit Design1 2 Reduce a Quantity of Parts and Manufaturing Process+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.1 Digital Transistors1.INOUT2.CommonBIAS RESISTOR VALUES3.OUTTYPE NO.R1(k ) R2

Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .

 

 
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